High quality interpoly dielectrics deposited on the nitrided-polysilicon for nonvolatile memory devices

Wen Luh Yang; Tien Sheng Chao; Chun Ming Cheng; Tung Ming Pan; Tan Fu Lei

doi:10.1109/16.930643

High quality interpoly dielectrics deposited on the nitrided-polysilicon for nonvolatile memory devices

Wen Luh Yang^*, Tien Sheng Chao, Chun Ming Cheng, Tung Ming Pan, Tan Fu Lei

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

9 Scopus citations

Abstract

High quality interpoly dielectrics have been fabricated by using NH₃ and N₂O nitridation on polysilicon and deposition of tetra-ethyl-ortho-silicate (TEOS) oxide with N₂O annealing. The surface roughness of polysilicon is improved and the value of weak bonds is reduced due to nitrogen incorporation at the interface, which improves the integrity of interpoly dielectrics. The improvements include a higher barrier height, breakdown strength, and charge-to-breakdown, and a lower leakage current and charge trapping rate than counterparts. It is found that this method can simutaneously improve both charge-to-breakdown (up to 20 C/cm²) and electric breakdown field (up to 17 MV/cm).

Original language	English
Pages (from-to)	1304-1309
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	48
Issue number	7
DOIs	https://doi.org/10.1109/16.930643
State	Published - 07 2001
Externally published	Yes

Keywords

Barrier height
Charge-to-breakdown
Dielectric
Electric breakdown field
Interpoly
Nonvolatile memories
Polysilicon

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10.1109/16.930643

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title = "High quality interpoly dielectrics deposited on the nitrided-polysilicon for nonvolatile memory devices",

abstract = "High quality interpoly dielectrics have been fabricated by using NH3 and N2O nitridation on polysilicon and deposition of tetra-ethyl-ortho-silicate (TEOS) oxide with N2O annealing. The surface roughness of polysilicon is improved and the value of weak bonds is reduced due to nitrogen incorporation at the interface, which improves the integrity of interpoly dielectrics. The improvements include a higher barrier height, breakdown strength, and charge-to-breakdown, and a lower leakage current and charge trapping rate than counterparts. It is found that this method can simutaneously improve both charge-to-breakdown (up to 20 C/cm2) and electric breakdown field (up to 17 MV/cm).",

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author = "Yang, {Wen Luh} and Chao, {Tien Sheng} and Cheng, {Chun Ming} and Pan, {Tung Ming} and Lei, {Tan Fu}",

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T1 - High quality interpoly dielectrics deposited on the nitrided-polysilicon for nonvolatile memory devices

AU - Yang, Wen Luh

AU - Chao, Tien Sheng

AU - Cheng, Chun Ming

AU - Pan, Tung Ming

AU - Lei, Tan Fu

PY - 2001/7

Y1 - 2001/7

N2 - High quality interpoly dielectrics have been fabricated by using NH3 and N2O nitridation on polysilicon and deposition of tetra-ethyl-ortho-silicate (TEOS) oxide with N2O annealing. The surface roughness of polysilicon is improved and the value of weak bonds is reduced due to nitrogen incorporation at the interface, which improves the integrity of interpoly dielectrics. The improvements include a higher barrier height, breakdown strength, and charge-to-breakdown, and a lower leakage current and charge trapping rate than counterparts. It is found that this method can simutaneously improve both charge-to-breakdown (up to 20 C/cm2) and electric breakdown field (up to 17 MV/cm).

AB - High quality interpoly dielectrics have been fabricated by using NH3 and N2O nitridation on polysilicon and deposition of tetra-ethyl-ortho-silicate (TEOS) oxide with N2O annealing. The surface roughness of polysilicon is improved and the value of weak bonds is reduced due to nitrogen incorporation at the interface, which improves the integrity of interpoly dielectrics. The improvements include a higher barrier height, breakdown strength, and charge-to-breakdown, and a lower leakage current and charge trapping rate than counterparts. It is found that this method can simutaneously improve both charge-to-breakdown (up to 20 C/cm2) and electric breakdown field (up to 17 MV/cm).

KW - Barrier height

KW - Charge-to-breakdown

KW - Dielectric

KW - Electric breakdown field

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KW - Nonvolatile memories

KW - Polysilicon

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High quality interpoly dielectrics deposited on the nitrided-polysilicon for nonvolatile memory devices

Abstract

Keywords

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