High quality interpoly-oxynitride grown by NH3 nitridation and N2O RTA treatment

Tung Ming Pan; Tan Fu Lei; Wen Luh Yang; Chun Ming Cheng; Tien Sheng Chao

doi:10.1109/55.902834

High quality interpoly-oxynitride grown by NH₃ nitridation and N₂O RTA treatment

Tung Ming Pan, Tan Fu Lei, Wen Luh Yang, Chun Ming Cheng, Tien Sheng Chao

Research output: Contribution to journal › Journal Article › peer-review

9 Scopus citations

Abstract

In this letter, a method to grow high quality inter-polysilicon-oxynitride (interpoly-oxynitride) film is proposed. Samples, nitridized by NH₃ with additional N₂O annealing and CVD TEOS deposited on poly-oxynitride (poly-I) with RTA N₂O oxidation, show excellent electrical properties in terms of very high electric breakdown field, low leakage current, high charge to breakdown, and low electron trapping rate. This novel film is a good candidate for an interpoly dielectric of future high density EEPROM and flash memory devices.

Original language	English
Pages (from-to)	68-70
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	22
Issue number	2
DOIs	https://doi.org/10.1109/55.902834
State	Published - 02 2001
Externally published	Yes

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title = "High quality interpoly-oxynitride grown by NH3 nitridation and N2O RTA treatment",

abstract = "In this letter, a method to grow high quality inter-polysilicon-oxynitride (interpoly-oxynitride) film is proposed. Samples, nitridized by NH3 with additional N2O annealing and CVD TEOS deposited on poly-oxynitride (poly-I) with RTA N2O oxidation, show excellent electrical properties in terms of very high electric breakdown field, low leakage current, high charge to breakdown, and low electron trapping rate. This novel film is a good candidate for an interpoly dielectric of future high density EEPROM and flash memory devices.",

author = "Pan, {Tung Ming} and Lei, {Tan Fu} and Yang, {Wen Luh} and Cheng, {Chun Ming} and Chao, {Tien Sheng}",

year = "2001",

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doi = "10.1109/55.902834",

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T1 - High quality interpoly-oxynitride grown by NH3 nitridation and N2O RTA treatment

AU - Pan, Tung Ming

AU - Lei, Tan Fu

AU - Yang, Wen Luh

AU - Cheng, Chun Ming

AU - Chao, Tien Sheng

PY - 2001/2

Y1 - 2001/2

N2 - In this letter, a method to grow high quality inter-polysilicon-oxynitride (interpoly-oxynitride) film is proposed. Samples, nitridized by NH3 with additional N2O annealing and CVD TEOS deposited on poly-oxynitride (poly-I) with RTA N2O oxidation, show excellent electrical properties in terms of very high electric breakdown field, low leakage current, high charge to breakdown, and low electron trapping rate. This novel film is a good candidate for an interpoly dielectric of future high density EEPROM and flash memory devices.

AB - In this letter, a method to grow high quality inter-polysilicon-oxynitride (interpoly-oxynitride) film is proposed. Samples, nitridized by NH3 with additional N2O annealing and CVD TEOS deposited on poly-oxynitride (poly-I) with RTA N2O oxidation, show excellent electrical properties in terms of very high electric breakdown field, low leakage current, high charge to breakdown, and low electron trapping rate. This novel film is a good candidate for an interpoly dielectric of future high density EEPROM and flash memory devices.

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M3 - 文章

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

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High quality interpoly-oxynitride grown by NH₃ nitridation and N₂O RTA treatment

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