High quality ultra-thin (2.4nm) oxide prepared by clustered vertical furnace with in-situ HF-vapor pre-gate oxide cleaning

T. S. Chao; J. L. Chen; C. S. Lai; H. C. Lin; T. Y. Huang

High quality ultra-thin (2.4nm) oxide prepared by clustered vertical furnace with in-situ HF-vapor pre-gate oxide cleaning

T. S. Chao^*, J. L. Chen, C. S. Lai, H. C. Lin, T. Y. Huang

^*Corresponding author for this work

National Nano Device Laboratories Taiwan

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

In this paper, we grow and characterize in detail native-oxide-free ultra-thin gate oxide (Tox=2.4nm) by an advance clustered vertical furnace with in-situ HF-vapor stripping of the native oxide. Excellent results are demonstrated. Gate oxide integrity is significantly improved in terms of leakage, time-to-breakdown, breakdown field, interface-state-density, stress-induced leakage current, Id, and Gm. In-situ HF-vapor cleaning by a clustered vertical furnace therefore appears to be very promising to grow high-quality native-oxide-free gate oxide for future deep-submicron device application.

Original language	English
Pages (from-to)	74-77
Number of pages	4
Journal	International Symposium on VLSI Technology, Systems, and Applications, Proceedings
State	Published - 1999
Externally published	Yes
Event	Proceedings of the 1999 International Symposium on VLSI Technology, Systems, and Applications - Taipei, Taiwan Duration: 07 06 1999 → 10 06 1999

Cite this

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title = "High quality ultra-thin (2.4nm) oxide prepared by clustered vertical furnace with in-situ HF-vapor pre-gate oxide cleaning",

abstract = "In this paper, we grow and characterize in detail native-oxide-free ultra-thin gate oxide (Tox=2.4nm) by an advance clustered vertical furnace with in-situ HF-vapor stripping of the native oxide. Excellent results are demonstrated. Gate oxide integrity is significantly improved in terms of leakage, time-to-breakdown, breakdown field, interface-state-density, stress-induced leakage current, Id, and Gm. In-situ HF-vapor cleaning by a clustered vertical furnace therefore appears to be very promising to grow high-quality native-oxide-free gate oxide for future deep-submicron device application.",

author = "Chao, \{T. S.\} and Chen, \{J. L.\} and Lai, \{C. S.\} and Lin, \{H. C.\} and Huang, \{T. Y.\}",

year = "1999",

language = "英语",

pages = "74--77",

journal = "International Symposium on VLSI Technology, Systems, and Applications, Proceedings",

issn = "1524-766X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1999 International Symposium on VLSI Technology, Systems, and Applications ; Conference date: 07-06-1999 Through 10-06-1999",

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TY - JOUR

T1 - High quality ultra-thin (2.4nm) oxide prepared by clustered vertical furnace with in-situ HF-vapor pre-gate oxide cleaning

AU - Chao, T. S.

AU - Chen, J. L.

AU - Lai, C. S.

AU - Lin, H. C.

AU - Huang, T. Y.

PY - 1999

Y1 - 1999

N2 - In this paper, we grow and characterize in detail native-oxide-free ultra-thin gate oxide (Tox=2.4nm) by an advance clustered vertical furnace with in-situ HF-vapor stripping of the native oxide. Excellent results are demonstrated. Gate oxide integrity is significantly improved in terms of leakage, time-to-breakdown, breakdown field, interface-state-density, stress-induced leakage current, Id, and Gm. In-situ HF-vapor cleaning by a clustered vertical furnace therefore appears to be very promising to grow high-quality native-oxide-free gate oxide for future deep-submicron device application.

AB - In this paper, we grow and characterize in detail native-oxide-free ultra-thin gate oxide (Tox=2.4nm) by an advance clustered vertical furnace with in-situ HF-vapor stripping of the native oxide. Excellent results are demonstrated. Gate oxide integrity is significantly improved in terms of leakage, time-to-breakdown, breakdown field, interface-state-density, stress-induced leakage current, Id, and Gm. In-situ HF-vapor cleaning by a clustered vertical furnace therefore appears to be very promising to grow high-quality native-oxide-free gate oxide for future deep-submicron device application.

UR - https://www.scopus.com/pages/publications/0032599259

M3 - 会议文章

AN - SCOPUS:0032599259

SN - 1524-766X

SP - 74

EP - 77

JO - International Symposium on VLSI Technology, Systems, and Applications, Proceedings

JF - International Symposium on VLSI Technology, Systems, and Applications, Proceedings

T2 - Proceedings of the 1999 International Symposium on VLSI Technology, Systems, and Applications

Y2 - 7 June 1999 through 10 June 1999

ER -

High quality ultra-thin (2.4nm) oxide prepared by clustered vertical furnace with in-situ HF-vapor pre-gate oxide cleaning

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