High quality ultrathin CoTiO3 high-k gate dielectrics

Tung Ming Pan, Tan Fu Lei, Tien Sheng Chao, Kuo Lih Chang, Kuang Chien Hsieh

Research output: Contribution to journalJournal Article peer-review

14 Scopus citations


A novel high-k cobalt-titanium oxide (CoTiO3) was formed by directly oxidizing sputtered Co/Ti film. Al/CoTiO3Si3N4/Si capacitor structure was fabricated and measured. The effective dielectric constant with buffered layer for CoTiO3 gate dielectric can reach as high as 40 while depicting excellent electrical properties at the same time. This novel metal oxide thus appears to be a promising high-k gate dielectric for future ultralarge scale integrated devices.

Original languageEnglish
Pages (from-to)433-434
Number of pages2
JournalElectrochemical and Solid-State Letters
Issue number9
StatePublished - 09 2000
Externally publishedYes


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