High-responsivity, high-speed, and high-saturation-power performances of evanescently coupled photodiodes with partially p-doped photo-absorption layer

J. W. Shi; Y. S. Wu; F. H. Huang; Y. J. Chan

High-responsivity, high-speed, and high-saturation-power performances of evanescently coupled photodiodes with partially p-doped photo-absorption layer

J. W. Shi^*, Y. S. Wu, F. H. Huang, Y. J. Chan

^*Corresponding author for this work

Department of Electronic Engineering

National Central University

Research output: Contribution to journal › Conference article › peer-review

6 Scopus citations

Abstract

Electrical bandwidth, output saturation current (power), and responsivity performances are usually three trade-off parameters in the design of high-speed photodetectors. In this paper, we demonstrate a high performance evanescently coupled photodiode (ECPD) with the partially p-doped photo-absorption layer. As compared to the control ECPD with the traditional intrinsic photo-absorption layer, the demonstrated device can exhibit much higher output saturation current (power) and electrical bandwidth without sacrificing the quantum efficiency performance.

Original language	English
Pages (from-to)	351-354
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting, IEDM
State	Published - 2004
Event	IEEE International Electron Devices Meeting, 2004 IEDM - San Francisco, CA, United States Duration: 13 12 2004 → 15 12 2004

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@article{fa7652933a0a4f989b792dc88abd7ceb,

title = "High-responsivity, high-speed, and high-saturation-power performances of evanescently coupled photodiodes with partially p-doped photo-absorption layer",

abstract = "Electrical bandwidth, output saturation current (power), and responsivity performances are usually three trade-off parameters in the design of high-speed photodetectors. In this paper, we demonstrate a high performance evanescently coupled photodiode (ECPD) with the partially p-doped photo-absorption layer. As compared to the control ECPD with the traditional intrinsic photo-absorption layer, the demonstrated device can exhibit much higher output saturation current (power) and electrical bandwidth without sacrificing the quantum efficiency performance.",

author = "Shi, \{J. W.\} and Wu, \{Y. S.\} and Huang, \{F. H.\} and Chan, \{Y. J.\}",

year = "2004",

language = "英语",

pages = "351--354",

journal = "Technical Digest - International Electron Devices Meeting, IEDM",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "IEEE International Electron Devices Meeting, 2004 IEDM ; Conference date: 13-12-2004 Through 15-12-2004",

}

TY - JOUR

T1 - High-responsivity, high-speed, and high-saturation-power performances of evanescently coupled photodiodes with partially p-doped photo-absorption layer

AU - Shi, J. W.

AU - Wu, Y. S.

AU - Huang, F. H.

AU - Chan, Y. J.

PY - 2004

Y1 - 2004

N2 - Electrical bandwidth, output saturation current (power), and responsivity performances are usually three trade-off parameters in the design of high-speed photodetectors. In this paper, we demonstrate a high performance evanescently coupled photodiode (ECPD) with the partially p-doped photo-absorption layer. As compared to the control ECPD with the traditional intrinsic photo-absorption layer, the demonstrated device can exhibit much higher output saturation current (power) and electrical bandwidth without sacrificing the quantum efficiency performance.

AB - Electrical bandwidth, output saturation current (power), and responsivity performances are usually three trade-off parameters in the design of high-speed photodetectors. In this paper, we demonstrate a high performance evanescently coupled photodiode (ECPD) with the partially p-doped photo-absorption layer. As compared to the control ECPD with the traditional intrinsic photo-absorption layer, the demonstrated device can exhibit much higher output saturation current (power) and electrical bandwidth without sacrificing the quantum efficiency performance.

UR - https://www.scopus.com/pages/publications/17644366382

M3 - 会议文章

AN - SCOPUS:17644366382

SN - 0163-1918

SP - 351

EP - 354

JO - Technical Digest - International Electron Devices Meeting, IEDM

JF - Technical Digest - International Electron Devices Meeting, IEDM

T2 - IEEE International Electron Devices Meeting, 2004 IEDM

Y2 - 13 December 2004 through 15 December 2004

ER -

High-responsivity, high-speed, and high-saturation-power performances of evanescently coupled photodiodes with partially p-doped photo-absorption layer

Abstract

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