High Schottky barrier Al0.5In0.5P/InGaAs doped-channel HFETs with superior microwave power performance

H. C. Chiu; S. C. Yang; Y. J. Chan; J. M. Kuo

doi:10.1049/el:20001371

High Schottky barrier Al_0.5In_0.5P/InGaAs doped-channel HFETs with superior microwave power performance

H. C. Chiu^*
, S. C. Yang
, Y. J. Chan
, J. M. Kuo

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

Abstract

Al_0.5In_0.5P/In_0.15Ga_0.85As doped-channel HFETs (DCFETs) are expected to have a high linearity and a high breakdown voltage for microwave power device applications due to the improvement of a larger ΔE_c (0.45 eV) and a wide bandgap AlInP Schottky layer. The device, biased at V_ds = 3.0 V and operated at 2.4 GHz, provided an output power density of 209 mW/mm, a power-added efficiency of 59% and a linear power gain of 17 dB. Two-tone measurement reveals that third-order intermodulation at an input power of 0 dBm is -29 dBc and the output intercept point (OIP₃) is 30.4 dBm for devices with a 1 mm wide gate.

Original language	English
Pages (from-to)	1968-1969
Number of pages	2
Journal	Electronics Letters
Volume	36
Issue number	23
DOIs	https://doi.org/10.1049/el:20001371
State	Published - 09 11 2000
Externally published	Yes

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title = "High Schottky barrier Al0.5In0.5P/InGaAs doped-channel HFETs with superior microwave power performance",

abstract = "Al0.5In0.5P/In0.15Ga0.85As doped-channel HFETs (DCFETs) are expected to have a high linearity and a high breakdown voltage for microwave power device applications due to the improvement of a larger ΔEc (0.45 eV) and a wide bandgap AlInP Schottky layer. The device, biased at Vds = 3.0 V and operated at 2.4 GHz, provided an output power density of 209 mW/mm, a power-added efficiency of 59\% and a linear power gain of 17 dB. Two-tone measurement reveals that third-order intermodulation at an input power of 0 dBm is -29 dBc and the output intercept point (OIP3) is 30.4 dBm for devices with a 1 mm wide gate.",

author = "Chiu, \{H. C.\} and Yang, \{S. C.\} and Chan, \{Y. J.\} and Kuo, \{J. M.\}",

year = "2000",

month = nov,

day = "9",

doi = "10.1049/el:20001371",

language = "英语",

volume = "36",

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journal = "Electronics Letters",

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publisher = "John Wiley \& Sons Inc.",

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TY - JOUR

T1 - High Schottky barrier Al0.5In0.5P/InGaAs doped-channel HFETs with superior microwave power performance

AU - Chiu, H. C.

AU - Yang, S. C.

AU - Chan, Y. J.

AU - Kuo, J. M.

PY - 2000/11/9

Y1 - 2000/11/9

N2 - Al0.5In0.5P/In0.15Ga0.85As doped-channel HFETs (DCFETs) are expected to have a high linearity and a high breakdown voltage for microwave power device applications due to the improvement of a larger ΔEc (0.45 eV) and a wide bandgap AlInP Schottky layer. The device, biased at Vds = 3.0 V and operated at 2.4 GHz, provided an output power density of 209 mW/mm, a power-added efficiency of 59% and a linear power gain of 17 dB. Two-tone measurement reveals that third-order intermodulation at an input power of 0 dBm is -29 dBc and the output intercept point (OIP3) is 30.4 dBm for devices with a 1 mm wide gate.

AB - Al0.5In0.5P/In0.15Ga0.85As doped-channel HFETs (DCFETs) are expected to have a high linearity and a high breakdown voltage for microwave power device applications due to the improvement of a larger ΔEc (0.45 eV) and a wide bandgap AlInP Schottky layer. The device, biased at Vds = 3.0 V and operated at 2.4 GHz, provided an output power density of 209 mW/mm, a power-added efficiency of 59% and a linear power gain of 17 dB. Two-tone measurement reveals that third-order intermodulation at an input power of 0 dBm is -29 dBc and the output intercept point (OIP3) is 30.4 dBm for devices with a 1 mm wide gate.

UR - https://www.scopus.com/pages/publications/0034319526

U2 - 10.1049/el:20001371

DO - 10.1049/el:20001371

M3 - 文章

AN - SCOPUS:0034319526

SN - 0013-5194

VL - 36

SP - 1968

EP - 1969

JO - Electronics Letters

JF - Electronics Letters

IS - 23

ER -

High Schottky barrier Al_0.5In_0.5P/InGaAs doped-channel HFETs with superior microwave power performance

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