High sensing performance of fluorinated HfO2 membrane by low damage CF4 plasma treatment for K+ detections

Chi Hsien Huang; I. Shun Wang; Kuan I. Ho; Tzu Wen Chiang; Chien Chou; Chu Fa Chang; Chao Sung Lai

doi:10.1109/INEC.2013.6466017

High sensing performance of fluorinated HfO₂ membrane by low damage CF₄ plasma treatment for K⁺ detections

Chi Hsien Huang^*, I. Shun Wang, Kuan I. Ho, Tzu Wen Chiang, Chien Chou, Chu Fa Chang, Chao Sung Lai

^*Corresponding author for this work

Chang Gung University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

A low damage CF₄ plasma with a filter in a PECVD system was proposed to incorporate fluorine atoms into an HfO₂ sensing membrane in an EIS structure for K⁺ ion sensor application. The highest sensitivities of 82mV/pK was obtained when the low damage plasma treatment with RF power of 100W was used for 30min. Compared with the conventional CF ₄ plasma, the sensitivity significantly improved. The reasons were the high polarization induced by fluorine atoms and elimination of plasma damage.

Original language	English
Title of host publication	Proceedings of the 2013 IEEE 5th International Nanoelectronics Conference, INEC 2013
Pages	261-262
Number of pages	2
DOIs	https://doi.org/10.1109/INEC.2013.6466017
State	Published - 2013
Event	2013 IEEE 5th International Nanoelectronics Conference, INEC 2013 - Singapore, Singapore Duration: 02 01 2013 → 04 01 2013

Publication series

Name	Proceedings - Winter Simulation Conference
ISSN (Print)	0891-7736

Conference

Conference	2013 IEEE 5th International Nanoelectronics Conference, INEC 2013
Country/Territory	Singapore
City	Singapore
Period	02/01/13 → 04/01/13

Keywords

CF plasma
HfO
electrolyte-insulator-semiconductor (EIS)
ion sensor
low damage

Access to Document

10.1109/INEC.2013.6466017

Cite this

Huang, C. H., Wang, I. S., Ho, K. I., Chiang, T. W., Chou, C., Chang, C. F., & Lai, C. S. (2013). High sensing performance of fluorinated HfO₂ membrane by low damage CF₄ plasma treatment for K⁺ detections. In Proceedings of the 2013 IEEE 5th International Nanoelectronics Conference, INEC 2013 (pp. 261-262). Article 6466017 (Proceedings - Winter Simulation Conference). https://doi.org/10.1109/INEC.2013.6466017

@inproceedings{a9f1cf12e886499f9f30e81213d177b1,

title = "High sensing performance of fluorinated HfO2 membrane by low damage CF4 plasma treatment for K+ detections",

abstract = "A low damage CF4 plasma with a filter in a PECVD system was proposed to incorporate fluorine atoms into an HfO2 sensing membrane in an EIS structure for K+ ion sensor application. The highest sensitivities of 82mV/pK was obtained when the low damage plasma treatment with RF power of 100W was used for 30min. Compared with the conventional CF 4 plasma, the sensitivity significantly improved. The reasons were the high polarization induced by fluorine atoms and elimination of plasma damage.",

keywords = "CF plasma, HfO, electrolyte-insulator-semiconductor (EIS), ion sensor, low damage",

author = "Huang, {Chi Hsien} and Wang, {I. Shun} and Ho, {Kuan I.} and Chiang, {Tzu Wen} and Chien Chou and Chang, {Chu Fa} and Lai, {Chao Sung}",

year = "2013",

doi = "10.1109/INEC.2013.6466017",

language = "英语",

isbn = "9781467348416",

series = "Proceedings - Winter Simulation Conference",

pages = "261--262",

booktitle = "Proceedings of the 2013 IEEE 5th International Nanoelectronics Conference, INEC 2013",

note = "2013 IEEE 5th International Nanoelectronics Conference, INEC 2013 ; Conference date: 02-01-2013 Through 04-01-2013",

}

Huang, CH, Wang, IS, Ho, KI, Chiang, TW, Chou, C, Chang, CF & Lai, CS 2013, High sensing performance of fluorinated HfO₂ membrane by low damage CF₄ plasma treatment for K⁺ detections. in Proceedings of the 2013 IEEE 5th International Nanoelectronics Conference, INEC 2013., 6466017, Proceedings - Winter Simulation Conference, pp. 261-262, 2013 IEEE 5th International Nanoelectronics Conference, INEC 2013, Singapore, Singapore, 02/01/13. https://doi.org/10.1109/INEC.2013.6466017

High sensing performance of fluorinated HfO₂ membrane by low damage CF₄ plasma treatment for K⁺ detections. / Huang, Chi Hsien; Wang, I. Shun; Ho, Kuan I. et al.
Proceedings of the 2013 IEEE 5th International Nanoelectronics Conference, INEC 2013. 2013. p. 261-262 6466017 (Proceedings - Winter Simulation Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AB - A low damage CF4 plasma with a filter in a PECVD system was proposed to incorporate fluorine atoms into an HfO2 sensing membrane in an EIS structure for K+ ion sensor application. The highest sensitivities of 82mV/pK was obtained when the low damage plasma treatment with RF power of 100W was used for 30min. Compared with the conventional CF 4 plasma, the sensitivity significantly improved. The reasons were the high polarization induced by fluorine atoms and elimination of plasma damage.

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