High sensitivity pH sensor using AlxGa1-xN/GaN HEMT heterostructure design

Hsin Shun Huang; Chao Wei Lin; Hsien Chin Chiu

doi:10.1109/EDSSC.2008.4760643

High sensitivity pH sensor using Al_xGa_1-xN/GaN HEMT heterostructure design

Hsin Shun Huang^*
, Chao Wei Lin
, Hsien Chin Chiu

^*Corresponding author for this work

Department of Electronic Engineering

Chang Gung University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

7 Scopus citations

Abstract

Gateless AlGaN/GaN high electron mobility transistors (HEMTs) has some advantages include rapid response, low noise, and superior sensitivity. In different Al content, the Al_0.3Ga_0.7N has the excellent performance among Al_0.17Ga_0.83N and Al _0.25Ga_0.75N, and the performance can be achieved about -0.923 mA/mm-pH during pH 4-10, and -2.24 mA/mm-pH during pH 7-8. The result indicates that the better performance of Al_0.3Ga_0.7N can be applied in high sensitivity pH sensor. Using the characteristic and modifying by different gate oxide, there are many application in the technology of medical for detecting the disease.

Original language	English
Title of host publication	2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC
DOIs	https://doi.org/10.1109/EDSSC.2008.4760643
State	Published - 2008
Event	2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC - Hong Kong, China Duration: 08 12 2008 → 10 12 2008

Publication series

Name	2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC

Conference

Conference	2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC
Country/Territory	China
City	Hong Kong
Period	08/12/08 → 10/12/08

Access to Document

10.1109/EDSSC.2008.4760643

Cite this

@inproceedings{73de7cc7b2234b04829deae9585b338e,

title = "High sensitivity pH sensor using AlxGa1-xN/GaN HEMT heterostructure design",

abstract = "Gateless AlGaN/GaN high electron mobility transistors (HEMTs) has some advantages include rapid response, low noise, and superior sensitivity. In different Al content, the Al0.3Ga0.7N has the excellent performance among Al0.17Ga0.83N and Al 0.25Ga0.75N, and the performance can be achieved about -0.923 mA/mm-pH during pH 4-10, and -2.24 mA/mm-pH during pH 7-8. The result indicates that the better performance of Al0.3Ga0.7N can be applied in high sensitivity pH sensor. Using the characteristic and modifying by different gate oxide, there are many application in the technology of medical for detecting the disease.",

author = "Huang, \{Hsin Shun\} and Lin, \{Chao Wei\} and Chiu, \{Hsien Chin\}",

year = "2008",

doi = "10.1109/EDSSC.2008.4760643",

language = "英语",

isbn = "9781424425402",

series = "2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC",

booktitle = "2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC",

note = "2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC ; Conference date: 08-12-2008 Through 10-12-2008",

}

Huang, HS, Lin, CW & Chiu, HC 2008, High sensitivity pH sensor using Al_xGa_1-xN/GaN HEMT heterostructure design. in 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC., 4760643, 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC, 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC, Hong Kong, China, 08/12/08. https://doi.org/10.1109/EDSSC.2008.4760643

High sensitivity pH sensor using Al_xGa_1-xN/GaN HEMT heterostructure design. / Huang, Hsin Shun; Lin, Chao Wei; Chiu, Hsien Chin.
2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC. 2008. 4760643 (2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - High sensitivity pH sensor using AlxGa1-xN/GaN HEMT heterostructure design

AU - Huang, Hsin Shun

AU - Lin, Chao Wei

AU - Chiu, Hsien Chin

PY - 2008

Y1 - 2008

N2 - Gateless AlGaN/GaN high electron mobility transistors (HEMTs) has some advantages include rapid response, low noise, and superior sensitivity. In different Al content, the Al0.3Ga0.7N has the excellent performance among Al0.17Ga0.83N and Al 0.25Ga0.75N, and the performance can be achieved about -0.923 mA/mm-pH during pH 4-10, and -2.24 mA/mm-pH during pH 7-8. The result indicates that the better performance of Al0.3Ga0.7N can be applied in high sensitivity pH sensor. Using the characteristic and modifying by different gate oxide, there are many application in the technology of medical for detecting the disease.

AB - Gateless AlGaN/GaN high electron mobility transistors (HEMTs) has some advantages include rapid response, low noise, and superior sensitivity. In different Al content, the Al0.3Ga0.7N has the excellent performance among Al0.17Ga0.83N and Al 0.25Ga0.75N, and the performance can be achieved about -0.923 mA/mm-pH during pH 4-10, and -2.24 mA/mm-pH during pH 7-8. The result indicates that the better performance of Al0.3Ga0.7N can be applied in high sensitivity pH sensor. Using the characteristic and modifying by different gate oxide, there are many application in the technology of medical for detecting the disease.

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M3 - 会议稿件

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SN - 9781424425402

T3 - 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC

BT - 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC

T2 - 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC

Y2 - 8 December 2008 through 10 December 2008

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