High-temperature modulation dynamics of 1.3 μm AlxGayIn1-x-yAs/InP compressive-strained multiple-quantum-well lasers

C. E. Zah; M. C. Wang; R. Bhat; T. P. Lee; S. L. Chuang; Z. Wang; D. Darby; D. Flanders; J. J. Hsieh

High-temperature modulation dynamics of 1.3 μm Al_xGa_yIn_1-x-yAs/InP compressive-strained multiple-quantum-well lasers

C. E. Zah^*
, M. C. Wang
, R. Bhat
, T. P. Lee
, S. L. Chuang
, Z. Wang
, D. Darby
, D. Flanders
, J. J. Hsieh

^*Corresponding author for this work

Telcordia Technologies

Research output: Contribution to journal › Conference article › peer-review

9 Scopus citations

Abstract

Intrinsic small-signal modulation responses of 1.3 μm Al_xGa_yIn_1-x-yAs/InP compressive-strained multiple-quantum-well lasers with three different barrier layers are investigated. For the lasers with a barrier bandgap wavelength of 1.01 μm, k factors are determined to be 0.24-0.25 ns, and thermal-limited 3-dB bandwidths of 19.5, 15, and 13.9 GHz are measured at 25, 65 and 85 °C, respectively.

Original language	English
Pages (from-to)	215-216
Number of pages	2
Journal	Conference Digest - IEEE International Semiconductor Laser Conference
State	Published - 1994
Externally published	Yes
Event	Proceedings of the 1994 14th International Semiconductor Laser Conference - Maui, HI, USA Duration: 19 09 1994 → 23 09 1994

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@article{9c959fd1cbdc4cb7bfec9f185b42e8e8,

title = "High-temperature modulation dynamics of 1.3 μm AlxGayIn1-x-yAs/InP compressive-strained multiple-quantum-well lasers",

abstract = "Intrinsic small-signal modulation responses of 1.3 μm AlxGayIn1-x-yAs/InP compressive-strained multiple-quantum-well lasers with three different barrier layers are investigated. For the lasers with a barrier bandgap wavelength of 1.01 μm, k factors are determined to be 0.24-0.25 ns, and thermal-limited 3-dB bandwidths of 19.5, 15, and 13.9 GHz are measured at 25, 65 and 85 °C, respectively.",

author = "Zah, \{C. E.\} and Wang, \{M. C.\} and R. Bhat and Lee, \{T. P.\} and Chuang, \{S. L.\} and Z. Wang and D. Darby and D. Flanders and Hsieh, \{J. J.\}",

year = "1994",

language = "英语",

pages = "215--216",

journal = "Conference Digest - IEEE International Semiconductor Laser Conference",

issn = "0899-9406",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1994 14th International Semiconductor Laser Conference ; Conference date: 19-09-1994 Through 23-09-1994",

}

TY - JOUR

T1 - High-temperature modulation dynamics of 1.3 μm AlxGayIn1-x-yAs/InP compressive-strained multiple-quantum-well lasers

AU - Zah, C. E.

AU - Wang, M. C.

AU - Bhat, R.

AU - Lee, T. P.

AU - Chuang, S. L.

AU - Wang, Z.

AU - Darby, D.

AU - Flanders, D.

AU - Hsieh, J. J.

PY - 1994

Y1 - 1994

N2 - Intrinsic small-signal modulation responses of 1.3 μm AlxGayIn1-x-yAs/InP compressive-strained multiple-quantum-well lasers with three different barrier layers are investigated. For the lasers with a barrier bandgap wavelength of 1.01 μm, k factors are determined to be 0.24-0.25 ns, and thermal-limited 3-dB bandwidths of 19.5, 15, and 13.9 GHz are measured at 25, 65 and 85 °C, respectively.

AB - Intrinsic small-signal modulation responses of 1.3 μm AlxGayIn1-x-yAs/InP compressive-strained multiple-quantum-well lasers with three different barrier layers are investigated. For the lasers with a barrier bandgap wavelength of 1.01 μm, k factors are determined to be 0.24-0.25 ns, and thermal-limited 3-dB bandwidths of 19.5, 15, and 13.9 GHz are measured at 25, 65 and 85 °C, respectively.

UR - https://www.scopus.com/pages/publications/0028721394

M3 - 会议文章

AN - SCOPUS:0028721394

SN - 0899-9406

SP - 215

EP - 216

JO - Conference Digest - IEEE International Semiconductor Laser Conference

JF - Conference Digest - IEEE International Semiconductor Laser Conference

T2 - Proceedings of the 1994 14th International Semiconductor Laser Conference

Y2 - 19 September 1994 through 23 September 1994

ER -

High-temperature modulation dynamics of 1.3 μm Al_xGa_yIn_1-x-yAs/InP compressive-strained multiple-quantum-well lasers

Abstract

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