High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-inch N-doped Low Resistivity SiC Substrate

Yu Chun Huang; Hsien Chin Chiu; Hsuan Ling Kao; Hsiang Chun Wang; Chia Hao Liu; Chong Rong Huang; Si Wen Chen

High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-inch N-doped Low Resistivity SiC Substrate

Yu Chun Huang
, Hsien Chin Chiu^*
, Hsuan Ling Kao
, Hsiang Chun Wang
, Chia Hao Liu
, Chong Rong Huang
, Si Wen Chen

^*Corresponding author for this work

Department of Electronic Engineering

Chang Gung University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Efficient heat removal through the substrate is required in high-power operation of AlGaN/GaN high-electron-mobility transistors (HEMTs). Thus, an SiC substrate was used due to its popularity. This article reports the electrical characteristics of normally off p-GaN gate AlGaN/GaN high-electron-mobility transistors (HEMTs) on low resistivity SiC substrate compared with the traditional Si substrate. The p-GaN HEMTs on SiC substrate possess several advantages, including electrical characteristic and good qualities of epitaxial crystals, especially on temperature performance. Additionally, the price of low resistivity SiC substrate is three times lower than the ordinary SiC substrate.

Original language	English
Title of host publication	CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers
Publisher	CS Mantech
Pages	97-100
Number of pages	4
ISBN (Electronic)	9781893580312
State	Published - 2021
Event	35th Annual International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2021 - Orlando, Virtual, United States Duration: 24 05 2021 → 27 05 2021

Publication series

Name	CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers

Conference

Conference	35th Annual International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2021
Country/Territory	United States
City	Orlando, Virtual
Period	24/05/21 → 27/05/21

Bibliographical note

Publisher Copyright:
© 2021 CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers. All Rights Reserved.

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 9 Industry, Innovation, and Infrastructure

Keywords

Low resistance SiC substrate
Normally off
P-GaN gate HEMT
Temperature

Cite this

Huang, Y. C., Chiu, H. C., Kao, H. L., Wang, H. C., Liu, C. H., Huang, C. R., & Chen, S. W. (2021). High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-inch N-doped Low Resistivity SiC Substrate. In CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers (pp. 97-100). (CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers). CS Mantech.

Huang, Yu Chun ; Chiu, Hsien Chin ; Kao, Hsuan Ling et al. / High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-inch N-doped Low Resistivity SiC Substrate. CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers. CS Mantech, 2021. pp. 97-100 (CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers).

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title = "High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-inch N-doped Low Resistivity SiC Substrate",

abstract = "Efficient heat removal through the substrate is required in high-power operation of AlGaN/GaN high-electron-mobility transistors (HEMTs). Thus, an SiC substrate was used due to its popularity. This article reports the electrical characteristics of normally off p-GaN gate AlGaN/GaN high-electron-mobility transistors (HEMTs) on low resistivity SiC substrate compared with the traditional Si substrate. The p-GaN HEMTs on SiC substrate possess several advantages, including electrical characteristic and good qualities of epitaxial crystals, especially on temperature performance. Additionally, the price of low resistivity SiC substrate is three times lower than the ordinary SiC substrate.",

keywords = "Low resistance SiC substrate, Normally off, P-GaN gate HEMT, Temperature",

author = "Huang, \{Yu Chun\} and Chiu, \{Hsien Chin\} and Kao, \{Hsuan Ling\} and Wang, \{Hsiang Chun\} and Liu, \{Chia Hao\} and Huang, \{Chong Rong\} and Chen, \{Si Wen\}",

note = "Publisher Copyright: {\textcopyright} 2021 CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers. All Rights Reserved.; 35th Annual International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2021 ; Conference date: 24-05-2021 Through 27-05-2021",

year = "2021",

language = "英语",

series = "CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers",

publisher = "CS Mantech",

pages = "97--100",

booktitle = "CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers",

}

Huang, YC, Chiu, HC , Kao, HL, Wang, HC, Liu, CH, Huang, CR & Chen, SW 2021, High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-inch N-doped Low Resistivity SiC Substrate. in CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers. CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers, CS Mantech, pp. 97-100, 35th Annual International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2021, Orlando, Virtual, United States, 24/05/21.

High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-inch N-doped Low Resistivity SiC Substrate. / Huang, Yu Chun; Chiu, Hsien Chin ; Kao, Hsuan Ling et al.
CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers. CS Mantech, 2021. p. 97-100 (CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-inch N-doped Low Resistivity SiC Substrate

AU - Huang, Yu Chun

AU - Chiu, Hsien Chin

AU - Kao, Hsuan Ling

AU - Wang, Hsiang Chun

AU - Liu, Chia Hao

AU - Huang, Chong Rong

AU - Chen, Si Wen

PY - 2021

Y1 - 2021

N2 - Efficient heat removal through the substrate is required in high-power operation of AlGaN/GaN high-electron-mobility transistors (HEMTs). Thus, an SiC substrate was used due to its popularity. This article reports the electrical characteristics of normally off p-GaN gate AlGaN/GaN high-electron-mobility transistors (HEMTs) on low resistivity SiC substrate compared with the traditional Si substrate. The p-GaN HEMTs on SiC substrate possess several advantages, including electrical characteristic and good qualities of epitaxial crystals, especially on temperature performance. Additionally, the price of low resistivity SiC substrate is three times lower than the ordinary SiC substrate.

AB - Efficient heat removal through the substrate is required in high-power operation of AlGaN/GaN high-electron-mobility transistors (HEMTs). Thus, an SiC substrate was used due to its popularity. This article reports the electrical characteristics of normally off p-GaN gate AlGaN/GaN high-electron-mobility transistors (HEMTs) on low resistivity SiC substrate compared with the traditional Si substrate. The p-GaN HEMTs on SiC substrate possess several advantages, including electrical characteristic and good qualities of epitaxial crystals, especially on temperature performance. Additionally, the price of low resistivity SiC substrate is three times lower than the ordinary SiC substrate.

KW - Low resistance SiC substrate

KW - Normally off

KW - P-GaN gate HEMT

KW - Temperature

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M3 - 会议稿件

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T3 - CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers

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EP - 100

BT - CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers

PB - CS Mantech

T2 - 35th Annual International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2021

Y2 - 24 May 2021 through 27 May 2021

ER -

Huang YC, Chiu HC , Kao HL, Wang HC, Liu CH, Huang CR et al. High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-inch N-doped Low Resistivity SiC Substrate. In CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers. CS Mantech. 2021. p. 97-100. (CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers).

High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-inch N-doped Low Resistivity SiC Substrate

Abstract

Publication series

Conference

Bibliographical note

UN SDGs

Keywords

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Cite this