High thermal stability AlGaAs/InGaAs enhancement-mode pHEMT using Pd buried-gate technology

Chih Wei Yang; Che Kai Lin; Da Wei Lin; Hsien Chin Chiu

doi:10.1109/EDSSC.2008.4760645

High thermal stability AlGaAs/InGaAs enhancement-mode pHEMT using Pd buried-gate technology

Chih Wei Yang^*, Che Kai Lin, Da Wei Lin, Hsien Chin Chiu

^*Corresponding author for this work

Department of Electronic Engineering

Chang Gung University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this work, two enhancement-mode (E-mode) GaAs-based high electron mobility transistors (HEMTs), grown by molecular beam epitaxy (MBE) system, have been fabricated and investigated. We evaporated traditional platinum (Pt) and palladium (Pd) as Schottky contact metals to observe high-temperature performance. Following the 1μm Pt/Ti/Au gate and Pd/Ti/Au gate metals deposition, the devices were thermally annealed at 200°C. Two devices DC and RF performance from 0°C to 100°C were measured. Because the platinum skins into Schottky Layer, the DC and RF characteristics were affected. Experimentally, the palladium gate device showed better DC, RF, and high-temperature characteristics. These advantages suggest that the palladium device is suitable for highspeed and high-power integrated circuit applications.

Original language	English
Title of host publication	2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC
DOIs	https://doi.org/10.1109/EDSSC.2008.4760645
State	Published - 2008
Event	2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC - Hong Kong, China Duration: 08 12 2008 → 10 12 2008

Publication series

Name	2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC

Conference

Conference	2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC
Country/Territory	China
City	Hong Kong
Period	08/12/08 → 10/12/08

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10.1109/EDSSC.2008.4760645

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Yang, C. W., Lin, C. K., Lin, D. W., & Chiu, H. C. (2008). High thermal stability AlGaAs/InGaAs enhancement-mode pHEMT using Pd buried-gate technology. In 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC Article 4760645 (2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC). https://doi.org/10.1109/EDSSC.2008.4760645

@inproceedings{105875121cad497f9c0bb1b73c568b70,

title = "High thermal stability AlGaAs/InGaAs enhancement-mode pHEMT using Pd buried-gate technology",

abstract = "In this work, two enhancement-mode (E-mode) GaAs-based high electron mobility transistors (HEMTs), grown by molecular beam epitaxy (MBE) system, have been fabricated and investigated. We evaporated traditional platinum (Pt) and palladium (Pd) as Schottky contact metals to observe high-temperature performance. Following the 1μm Pt/Ti/Au gate and Pd/Ti/Au gate metals deposition, the devices were thermally annealed at 200°C. Two devices DC and RF performance from 0°C to 100°C were measured. Because the platinum skins into Schottky Layer, the DC and RF characteristics were affected. Experimentally, the palladium gate device showed better DC, RF, and high-temperature characteristics. These advantages suggest that the palladium device is suitable for highspeed and high-power integrated circuit applications.",

author = "Yang, {Chih Wei} and Lin, {Che Kai} and Lin, {Da Wei} and Chiu, {Hsien Chin}",

year = "2008",

doi = "10.1109/EDSSC.2008.4760645",

language = "英语",

isbn = "9781424425402",

series = "2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC",

booktitle = "2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC",

note = "2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC ; Conference date: 08-12-2008 Through 10-12-2008",

}

Yang, CW, Lin, CK, Lin, DW & Chiu, HC 2008, High thermal stability AlGaAs/InGaAs enhancement-mode pHEMT using Pd buried-gate technology. in 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC., 4760645, 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC, 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC, Hong Kong, China, 08/12/08. https://doi.org/10.1109/EDSSC.2008.4760645

High thermal stability AlGaAs/InGaAs enhancement-mode pHEMT using Pd buried-gate technology. / Yang, Chih Wei; Lin, Che Kai; Lin, Da Wei et al.
2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC. 2008. 4760645 (2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - High thermal stability AlGaAs/InGaAs enhancement-mode pHEMT using Pd buried-gate technology

AU - Yang, Chih Wei

AU - Lin, Che Kai

AU - Lin, Da Wei

AU - Chiu, Hsien Chin

PY - 2008

Y1 - 2008

N2 - In this work, two enhancement-mode (E-mode) GaAs-based high electron mobility transistors (HEMTs), grown by molecular beam epitaxy (MBE) system, have been fabricated and investigated. We evaporated traditional platinum (Pt) and palladium (Pd) as Schottky contact metals to observe high-temperature performance. Following the 1μm Pt/Ti/Au gate and Pd/Ti/Au gate metals deposition, the devices were thermally annealed at 200°C. Two devices DC and RF performance from 0°C to 100°C were measured. Because the platinum skins into Schottky Layer, the DC and RF characteristics were affected. Experimentally, the palladium gate device showed better DC, RF, and high-temperature characteristics. These advantages suggest that the palladium device is suitable for highspeed and high-power integrated circuit applications.

AB - In this work, two enhancement-mode (E-mode) GaAs-based high electron mobility transistors (HEMTs), grown by molecular beam epitaxy (MBE) system, have been fabricated and investigated. We evaporated traditional platinum (Pt) and palladium (Pd) as Schottky contact metals to observe high-temperature performance. Following the 1μm Pt/Ti/Au gate and Pd/Ti/Au gate metals deposition, the devices were thermally annealed at 200°C. Two devices DC and RF performance from 0°C to 100°C were measured. Because the platinum skins into Schottky Layer, the DC and RF characteristics were affected. Experimentally, the palladium gate device showed better DC, RF, and high-temperature characteristics. These advantages suggest that the palladium device is suitable for highspeed and high-power integrated circuit applications.

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M3 - 会议稿件

AN - SCOPUS:63249101214

SN - 9781424425402

T3 - 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC

BT - 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC

T2 - 2008 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC

Y2 - 8 December 2008 through 10 December 2008

ER -

High thermal stability AlGaAs/InGaAs enhancement-mode pHEMT using Pd buried-gate technology

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