High thermally stable AlGaN/GaN high electron mobility transistors (HEMTs) on bulk semi-insulating GaN substrates

Hao Yu Wang; Hsien Chin Chiu; Chong Rong Huang; Hao Chung Kuo; Sung Wen Huang Chen; Xinke Liu

High thermally stable AlGaN/GaN high electron mobility transistors (HEMTs) on bulk semi-insulating GaN substrates

Hao Yu Wang, Hsien Chin Chiu^*, Chong Rong Huang, Hao Chung Kuo, Sung Wen Huang Chen, Xinke Liu

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Contribution to conference › Conference Paper › peer-review

Abstract

In this study, a AlGaN/GaN high-electron-mobility transistor (HEMT) grown on the bulk GaN substrate was demonstrated and compared against one grown on the SiC substrate. Results of X-ray diffraction and reciprocal space mapping revealed that the bulk GaN substrate structure exhibited less lattice dislocation. The GaN substrate device demonstrated better I_DS–V_GS and gm–V_GS characteristics of I_DS = 700 mA/mm at V_GS = +2 V and gm_max = 148 mS/mm. Compared with the SiC substrate, the current density in the HEMT grown on GaN was improved. The GaN substrate also improved current collapse and dynamic ON-state resistance due to a decrease in the trapping effect. The low-frequency noise and Hooge results also indicated that the GaN substrate had lower lattice dislocation.

Original language	English
State	Published - 2019
Event	2019 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019 - Minneapolis, United States Duration: 29 04 2019 → 02 05 2019

Conference

Conference	2019 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019
Country/Territory	United States
City	Minneapolis
Period	29/04/19 → 02/05/19

Bibliographical note

Publisher Copyright:
© 2019 CS Mantech. All rights reserved.

Keywords

Bulk GaN substrate
Gallium nitride
Microwave device

Cite this

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title = "High thermally stable AlGaN/GaN high electron mobility transistors (HEMTs) on bulk semi-insulating GaN substrates",

abstract = "In this study, a AlGaN/GaN high-electron-mobility transistor (HEMT) grown on the bulk GaN substrate was demonstrated and compared against one grown on the SiC substrate. Results of X-ray diffraction and reciprocal space mapping revealed that the bulk GaN substrate structure exhibited less lattice dislocation. The GaN substrate device demonstrated better IDS–VGS and gm–VGS characteristics of IDS = 700 mA/mm at VGS = +2 V and gmmax = 148 mS/mm. Compared with the SiC substrate, the current density in the HEMT grown on GaN was improved. The GaN substrate also improved current collapse and dynamic ON-state resistance due to a decrease in the trapping effect. The low-frequency noise and Hooge results also indicated that the GaN substrate had lower lattice dislocation.",

keywords = "Bulk GaN substrate, Gallium nitride, Microwave device",

author = "Wang, {Hao Yu} and Chiu, {Hsien Chin} and Huang, {Chong Rong} and Kuo, {Hao Chung} and Chen, {Sung Wen Huang} and Xinke Liu",

note = "Publisher Copyright: {\textcopyright} 2019 CS Mantech. All rights reserved.; 2019 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019 ; Conference date: 29-04-2019 Through 02-05-2019",

year = "2019",

language = "英语",

}

High thermally stable AlGaN/GaN high electron mobility transistors (HEMTs) on bulk semi-insulating GaN substrates. / Wang, Hao Yu; Chiu, Hsien Chin; Huang, Chong Rong et al.
2019. Paper presented at 2019 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019, Minneapolis, United States.

Research output: Contribution to conference › Conference Paper › peer-review

TY - CONF

T1 - High thermally stable AlGaN/GaN high electron mobility transistors (HEMTs) on bulk semi-insulating GaN substrates

AU - Wang, Hao Yu

AU - Chiu, Hsien Chin

AU - Huang, Chong Rong

AU - Kuo, Hao Chung

AU - Chen, Sung Wen Huang

AU - Liu, Xinke

PY - 2019

Y1 - 2019

N2 - In this study, a AlGaN/GaN high-electron-mobility transistor (HEMT) grown on the bulk GaN substrate was demonstrated and compared against one grown on the SiC substrate. Results of X-ray diffraction and reciprocal space mapping revealed that the bulk GaN substrate structure exhibited less lattice dislocation. The GaN substrate device demonstrated better IDS–VGS and gm–VGS characteristics of IDS = 700 mA/mm at VGS = +2 V and gmmax = 148 mS/mm. Compared with the SiC substrate, the current density in the HEMT grown on GaN was improved. The GaN substrate also improved current collapse and dynamic ON-state resistance due to a decrease in the trapping effect. The low-frequency noise and Hooge results also indicated that the GaN substrate had lower lattice dislocation.

AB - In this study, a AlGaN/GaN high-electron-mobility transistor (HEMT) grown on the bulk GaN substrate was demonstrated and compared against one grown on the SiC substrate. Results of X-ray diffraction and reciprocal space mapping revealed that the bulk GaN substrate structure exhibited less lattice dislocation. The GaN substrate device demonstrated better IDS–VGS and gm–VGS characteristics of IDS = 700 mA/mm at VGS = +2 V and gmmax = 148 mS/mm. Compared with the SiC substrate, the current density in the HEMT grown on GaN was improved. The GaN substrate also improved current collapse and dynamic ON-state resistance due to a decrease in the trapping effect. The low-frequency noise and Hooge results also indicated that the GaN substrate had lower lattice dislocation.

KW - Bulk GaN substrate

KW - Gallium nitride

KW - Microwave device

UR - http://www.scopus.com/inward/record.url?scp=85067080233&partnerID=8YFLogxK

M3 - 论文

AN - SCOPUS:85067080233

T2 - 2019 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2019

Y2 - 29 April 2019 through 2 May 2019

ER -

High thermally stable AlGaN/GaN high electron mobility transistors (HEMTs) on bulk semi-insulating GaN substrates

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Keywords

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