High-voltage electron-beam-induced-current imaging of microdefects in laser diodes and MESFETS

D. M. Hwang*, L. DeChiaro, M. C. Wang, P. S.D. Lin, C. E. Zah, S. Ovadia, T. P. Lee, D. Darby, Y. A. Tkachenko, J. C.M. Hwang

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations

Abstract

We have developed a new device characterization technique called High-Voltage Electron-Beam-Induced-Current (HV-EBIC). This technique marks a breakthrough in the art of EBIC, providing a much improved probing depth and spatial resolution without destructive sample preparation procedures. It can probe structures 0.5 μm underneath the surface with a spatial resolution better than 0.1 μm. It serves as the only nondestructive technique that reveals defect distribution and junction locations with sufficient spatial resolution, and therefore has many potential applications in semiconductor device development, manufacturing, and failure analysis. In this article, we describe the operation principles of HV-EBIC and its advantages over the conventional low-voltage EBIC using Monte Carlo simulation. To demonstrate the power of HV-EBIC, we present some preliminary results on the study of degradation mechanisms in In0.2Ga0.8As strained quantum-well lasers, and in GaAs metal-semiconductor field-effect transistors (MESFETs).

Original languageEnglish
Title of host publicationAnnual Proceedings - Reliability Physics (Symposium)
PublisherPubl by IEEE
Pages470-477
Number of pages8
ISBN (Print)0780313577, 9780780313576
DOIs
StatePublished - 1994
Externally publishedYes
EventProceedings of the 32nd Annual International Reliability Physics Proceedings - San Jose, CA, USA
Duration: 12 04 199414 04 1994

Publication series

NameAnnual Proceedings - Reliability Physics (Symposium)
ISSN (Print)0099-9512

Conference

ConferenceProceedings of the 32nd Annual International Reliability Physics Proceedings
CitySan Jose, CA, USA
Period12/04/9414/04/94

Fingerprint

Dive into the research topics of 'High-voltage electron-beam-induced-current imaging of microdefects in laser diodes and MESFETS'. Together they form a unique fingerprint.

Cite this