High voltage vertical GaN p–n diode with N2O sidewall treatment on free-standing GaN wafer

Hao Yu Wang; Xinke Liu; Hsien Chin Chiu; Cong Hu; Hsiang Chun Wang; Hsuan Ling Kao; Feng Tso Chien

High voltage vertical GaN p–n diode with N2O sidewall treatment on free-standing GaN wafer

Hao Yu Wang
, Xinke Liu
, Hsien Chin Chiu
, Cong Hu
, Hsiang Chun Wang
, Hsuan Ling Kao
, Feng Tso Chien

Department of Electronic Engineering

Research output: Contribution to conference › Conference Paper › peer-review

Abstract

In this study, a vertical GaN PN diodes on free-standing (FS) GaN wafer was fabricated with N2O plasma treatment at the anode interface, and it was compared with a conventional GaN p–n diode. The N2O plasma provided N atoms to produce a native oxide-free interface. The fabricated diode demonstrated a reverse breakdown voltage of 2.3 kV and specific on-resistance of 3.13 mΩ.cm². The figure of merit of this diode was 1.76MW/cm². These results were superior to those of the conventional GaN p–n diode. The reverse recovery time of the N2O-treated vertical GaN p–n diode was 17.6 ns. Moreover, the Ron,D/Ron,S ratio decreased to 20.1 relative to that of the conventional diode, suggesting that the N2O plasma treatment improved the surface states of N-vacancies.

Original language	English
State	Published - 2018
Event	2018 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2018 - Austin, United States Duration: 07 05 2018 → 10 05 2018

Conference

Conference	2018 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2018
Country/Territory	United States
City	Austin
Period	07/05/18 → 10/05/18

Bibliographical note

Publisher Copyright:
© 2018 GaAs Mantech Incorporated. All Rights Reserved.

Keywords

Avalanche breakdown
Gallium nitride (GaN)
Power diodes
Power-semiconductor devices

Cite this

@conference{6d0fe7d4d1f14a09b504f9ad68e32910,

title = "High voltage vertical GaN p–n diode with N2O sidewall treatment on free-standing GaN wafer",

abstract = "In this study, a vertical GaN PN diodes on free-standing (FS) GaN wafer was fabricated with N2O plasma treatment at the anode interface, and it was compared with a conventional GaN p–n diode. The N2O plasma provided N atoms to produce a native oxide-free interface. The fabricated diode demonstrated a reverse breakdown voltage of 2.3 kV and specific on-resistance of 3.13 mΩ.cm2. The figure of merit of this diode was 1.76MW/cm2. These results were superior to those of the conventional GaN p–n diode. The reverse recovery time of the N2O-treated vertical GaN p–n diode was 17.6 ns. Moreover, the Ron,D/Ron,S ratio decreased to 20.1 relative to that of the conventional diode, suggesting that the N2O plasma treatment improved the surface states of N-vacancies.",

keywords = "Avalanche breakdown, Gallium nitride (GaN), Power diodes, Power-semiconductor devices",

author = "Wang, \{Hao Yu\} and Xinke Liu and Chiu, \{Hsien Chin\} and Cong Hu and Wang, \{Hsiang Chun\} and Kao, \{Hsuan Ling\} and Chien, \{Feng Tso\}",

note = "Publisher Copyright: {\textcopyright} 2018 GaAs Mantech Incorporated. All Rights Reserved.; 2018 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2018 ; Conference date: 07-05-2018 Through 10-05-2018",

year = "2018",

language = "英语",

}

High voltage vertical GaN p–n diode with N2O sidewall treatment on free-standing GaN wafer. / Wang, Hao Yu; Liu, Xinke; Chiu, Hsien Chin et al.
2018. Paper presented at 2018 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2018, Austin, United States.

Research output: Contribution to conference › Conference Paper › peer-review

TY - CONF

T1 - High voltage vertical GaN p–n diode with N2O sidewall treatment on free-standing GaN wafer

AU - Wang, Hao Yu

AU - Liu, Xinke

AU - Chiu, Hsien Chin

AU - Hu, Cong

AU - Wang, Hsiang Chun

AU - Kao, Hsuan Ling

AU - Chien, Feng Tso

PY - 2018

Y1 - 2018

N2 - In this study, a vertical GaN PN diodes on free-standing (FS) GaN wafer was fabricated with N2O plasma treatment at the anode interface, and it was compared with a conventional GaN p–n diode. The N2O plasma provided N atoms to produce a native oxide-free interface. The fabricated diode demonstrated a reverse breakdown voltage of 2.3 kV and specific on-resistance of 3.13 mΩ.cm2. The figure of merit of this diode was 1.76MW/cm2. These results were superior to those of the conventional GaN p–n diode. The reverse recovery time of the N2O-treated vertical GaN p–n diode was 17.6 ns. Moreover, the Ron,D/Ron,S ratio decreased to 20.1 relative to that of the conventional diode, suggesting that the N2O plasma treatment improved the surface states of N-vacancies.

AB - In this study, a vertical GaN PN diodes on free-standing (FS) GaN wafer was fabricated with N2O plasma treatment at the anode interface, and it was compared with a conventional GaN p–n diode. The N2O plasma provided N atoms to produce a native oxide-free interface. The fabricated diode demonstrated a reverse breakdown voltage of 2.3 kV and specific on-resistance of 3.13 mΩ.cm2. The figure of merit of this diode was 1.76MW/cm2. These results were superior to those of the conventional GaN p–n diode. The reverse recovery time of the N2O-treated vertical GaN p–n diode was 17.6 ns. Moreover, the Ron,D/Ron,S ratio decreased to 20.1 relative to that of the conventional diode, suggesting that the N2O plasma treatment improved the surface states of N-vacancies.

KW - Avalanche breakdown

KW - Gallium nitride (GaN)

KW - Power diodes

KW - Power-semiconductor devices

UR - https://www.scopus.com/pages/publications/85050013710

M3 - 论文

AN - SCOPUS:85050013710

T2 - 2018 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2018

Y2 - 7 May 2018 through 10 May 2018

ER -

High voltage vertical GaN p–n diode with N2O sidewall treatment on free-standing GaN wafer

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