High Yield and Low Voltage operation Gadolinium Oxide RRAM by Hydrogen Plasma Ion Immersion Implantation Technique

Research output: Contribution to conference › Proceeding

Original language	American English
State	Published - 2012
Event	International Electron Devices and Materials Symposia 2012 (IEDMS 2012) - Kaohsiung, Taiwan Duration: 29 11 2012 → 30 11 2012

Conference	International Electron Devices and Materials Symposia 2012 (IEDMS 2012)
Period	29/11/12 → 30/11/12

Cite this

@conference{a25ff0ccf96242c3a954aa2451151915,

title = "High Yield and Low Voltage operation Gadolinium Oxide RRAM by Hydrogen Plasma Ion Immersion Implantation Technique",

author = "Jer-Chyi Wang",

year = "2012",

language = "American English",

note = "International Electron Devices and Materials Symposia 2012 (IEDMS 2012) ; Conference date: 29-11-2012 Through 30-11-2012",

}