Highly Reliable Electrocaloric Behaviors of Antiferroelectric Al:ZrO2Thin Films for Solid-State Cooling in Integrated Circuits

Yu Hua Liu, Li Hsiang Lin, Shao Hao Lu, Hsin Chun Lu, Jer Chyi Wang*

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

2 Scopus citations

Abstract

Heat generation in integrated circuits (ICs) has become a severe issue, which limits the utilization of miniaturized semiconductor devices in high-density 3-D IC technologies. Herein, Al2O3 was doped in ZrO2 thin films by plasma-enhanced atomic layer deposition (PEALD) to enhance their antiferroelectric (AFE) characteristics for highly reliable electrocaloric (EC) cooling applications. The cycling endurance in AFE behaviors of the Al:ZrO2 thin films under a high electric field of 5 MV/cm was significantly improved because of the enlargement of the energy bandgap with high resistance in trap-induced leakage current. Hence, the reliability of the EC effect of the 1% Al:ZrO2 thin film was examined with a negligible change in adiabatic temperature change ( $\Delta {T}$ ) of 2.6% after a cycling endurance test of $10^{{6}}$ cycles. With the competitive cycling reliabilities in AFE and EC behaviors, devices with optimized Al2O3-incorporated ZrO2 thin films show significant potential for future nanoscale cooling systems in chip-level ICs.

Original languageEnglish
Pages (from-to)6352-6358
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume68
Issue number12
DOIs
StatePublished - 01 12 2021

Bibliographical note

Publisher Copyright:
© 1963-2012 IEEE.

Keywords

  • Al₂O₃
  • ZrO₂
  • antiferroelectric (AFE)
  • cycling endurance
  • electrocaloric (EC)
  • plasma-enhanced atomic layer deposition (PEALD)

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