Highly scalable NAND-type PHINES flash memory for data flash applications

C. C. Yeh; Y. Y. Liao; W. J. Tsai; T. C. Lu; T. F. Ou; H. L. Kao; Tahui Wang; Wen Chi Ting; Joseph Ku; Chih Yuau Lu

doi:10.1109/.2006.1629502

Highly scalable NAND-type PHINES flash memory for data flash applications

C. C. Yeh^*, Y. Y. Liao, W. J. Tsai, T. C. Lu, T. F. Ou, H. L. Kao, Tahui Wang, Wen Chi Ting, Joseph Ku, Chih Yuau Lu

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this paper, two NAND-type PHINES flash memory architectures (1 bit/cell and physically 2 bit/cell) are proposed for mass storage applications. PHINES nitride trapping storage flash memory features high storage density, low power operation, good reliability, simple process, and high programming throughput. Fifteen-nm generation is feasible for future flash memory technology.

Original language	English
Title of host publication	21st IEEE Non-Volatile Semiconductor Memory Workshop 2006, NVSMW 2006
Pages	76-77
Number of pages	2
DOIs	https://doi.org/10.1109/.2006.1629502
State	Published - 2006
Externally published	Yes
Event	21st IEEE Non-Volatile Semiconductor Memory Workshop 2006, NVSMW 2006 - Monteray, CA, United States Duration: 12 02 2006 → 16 02 2006

Publication series

Name	21st IEEE Non-Volatile Semiconductor Memory Workshop 2006, NVSMW 2006
Volume	2006

Conference

Conference	21st IEEE Non-Volatile Semiconductor Memory Workshop 2006, NVSMW 2006
Country/Territory	United States
City	Monteray, CA
Period	12/02/06 → 16/02/06

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10.1109/.2006.1629502

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Yeh, C. C., Liao, Y. Y., Tsai, W. J., Lu, T. C., Ou, T. F., Kao, H. L., Wang, T., Ting, W. C., Ku, J., & Lu, C. Y. (2006). Highly scalable NAND-type PHINES flash memory for data flash applications. In 21st IEEE Non-Volatile Semiconductor Memory Workshop 2006, NVSMW 2006 (pp. 76-77). Article 1629502 (21st IEEE Non-Volatile Semiconductor Memory Workshop 2006, NVSMW 2006; Vol. 2006). https://doi.org/10.1109/.2006.1629502

@inproceedings{5f07a140a3aa4c5492eeefff09b02427,

title = "Highly scalable NAND-type PHINES flash memory for data flash applications",

abstract = "In this paper, two NAND-type PHINES flash memory architectures (1 bit/cell and physically 2 bit/cell) are proposed for mass storage applications. PHINES nitride trapping storage flash memory features high storage density, low power operation, good reliability, simple process, and high programming throughput. Fifteen-nm generation is feasible for future flash memory technology.",

author = "Yeh, {C. C.} and Liao, {Y. Y.} and Tsai, {W. J.} and Lu, {T. C.} and Ou, {T. F.} and Kao, {H. L.} and Tahui Wang and Ting, {Wen Chi} and Joseph Ku and Lu, {Chih Yuau}",

year = "2006",

doi = "10.1109/.2006.1629502",

language = "英语",

isbn = "1424400260",

series = "21st IEEE Non-Volatile Semiconductor Memory Workshop 2006, NVSMW 2006",

pages = "76--77",

booktitle = "21st IEEE Non-Volatile Semiconductor Memory Workshop 2006, NVSMW 2006",

note = "21st IEEE Non-Volatile Semiconductor Memory Workshop 2006, NVSMW 2006 ; Conference date: 12-02-2006 Through 16-02-2006",

}

Yeh, CC, Liao, YY, Tsai, WJ, Lu, TC, Ou, TF, Kao, HL, Wang, T, Ting, WC, Ku, J & Lu, CY 2006, Highly scalable NAND-type PHINES flash memory for data flash applications. in 21st IEEE Non-Volatile Semiconductor Memory Workshop 2006, NVSMW 2006., 1629502, 21st IEEE Non-Volatile Semiconductor Memory Workshop 2006, NVSMW 2006, vol. 2006, pp. 76-77, 21st IEEE Non-Volatile Semiconductor Memory Workshop 2006, NVSMW 2006, Monteray, CA, United States, 12/02/06. https://doi.org/10.1109/.2006.1629502

Highly scalable NAND-type PHINES flash memory for data flash applications. / Yeh, C. C.; Liao, Y. Y.; Tsai, W. J. et al.
21st IEEE Non-Volatile Semiconductor Memory Workshop 2006, NVSMW 2006. 2006. p. 76-77 1629502 (21st IEEE Non-Volatile Semiconductor Memory Workshop 2006, NVSMW 2006; Vol. 2006).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Yeh, C. C.

AU - Liao, Y. Y.

AU - Tsai, W. J.

AU - Lu, T. C.

AU - Ou, T. F.

AU - Kao, H. L.

AU - Wang, Tahui

AU - Ting, Wen Chi

AU - Ku, Joseph

AU - Lu, Chih Yuau

PY - 2006

Y1 - 2006

N2 - In this paper, two NAND-type PHINES flash memory architectures (1 bit/cell and physically 2 bit/cell) are proposed for mass storage applications. PHINES nitride trapping storage flash memory features high storage density, low power operation, good reliability, simple process, and high programming throughput. Fifteen-nm generation is feasible for future flash memory technology.

AB - In this paper, two NAND-type PHINES flash memory architectures (1 bit/cell and physically 2 bit/cell) are proposed for mass storage applications. PHINES nitride trapping storage flash memory features high storage density, low power operation, good reliability, simple process, and high programming throughput. Fifteen-nm generation is feasible for future flash memory technology.

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U2 - 10.1109/.2006.1629502

DO - 10.1109/.2006.1629502

M3 - 会议稿件

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SN - 1424400260

SN - 9781424400263

T3 - 21st IEEE Non-Volatile Semiconductor Memory Workshop 2006, NVSMW 2006

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BT - 21st IEEE Non-Volatile Semiconductor Memory Workshop 2006, NVSMW 2006

T2 - 21st IEEE Non-Volatile Semiconductor Memory Workshop 2006, NVSMW 2006

Y2 - 12 February 2006 through 16 February 2006

ER -

Highly scalable NAND-type PHINES flash memory for data flash applications

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