Highly thermally stable and reproducible of ALD RuO2 nanocrystal floating gate memory devices with large memory window and good retention

S. Maikap; W. Banerjee; P. J. Tzeng; T. Y. Wang; C. H. Lin; T. C. Tien; L. S. Lee; J. R. Yang; M. J. Kao; M. J. Tsai

doi:10.1109/VTSA.2008.4530793

Highly thermally stable and reproducible of ALD RuO₂ nanocrystal floating gate memory devices with large memory window and good retention

S. Maikap^*
, W. Banerjee
, P. J. Tzeng
, T. Y. Wang
, C. H. Lin
, T. C. Tien
, L. S. Lee
, J. R. Yang
, M. J. Kao
, M. J. Tsai

^*Corresponding author for this work

Department of Electronic Engineering

Chang Gung University
Industrial Technology Research Institute of Taiwan
The University of Sydney

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

Highly thermally stable (∼1000°C) and reproducible of ALD RuO ₂ nanocrystal floating gate memory devices with a large hysteresis memory window of ΔV ≈14.6V under a gate voltage of ±10V have been observed. The memory window of ΔV ≈ 4.2V under a small gate voltage of ±3V is also observed. Both program and erase speeds of ΔV_FB>1V@100μs are achieved under Fowler-Nordlieim injections. Excellent endurance of ΔV ≈ 8.5V, before and after 10 ⁴ cycles and a large memory window of ΔV = 4.9 V after 10 years of retention (9% charge loss at 20°C and ∼20% charge loss at 85°C) are obtained. The high-performance ALD RuO₂ nanocystal flash memory devices can be operated below 5V.

Original language	English
Title of host publication	2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA
Pages	50-51
Number of pages	2
DOIs	https://doi.org/10.1109/VTSA.2008.4530793
State	Published - 2008
Event	2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA - Hsinchu, Taiwan Duration: 21 04 2008 → 23 04 2008

Publication series

Name	International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Conference

Conference	2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA
Country/Territory	Taiwan
City	Hsinchu
Period	21/04/08 → 23/04/08

Access to Document

10.1109/VTSA.2008.4530793

Cite this

Maikap, S., Banerjee, W., Tzeng, P. J., Wang, T. Y., Lin, C. H., Tien, T. C., Lee, L. S., Yang, J. R., Kao, M. J., & Tsai, M. J. (2008). Highly thermally stable and reproducible of ALD RuO₂ nanocrystal floating gate memory devices with large memory window and good retention. In 2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA (pp. 50-51). Article 4530793 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). https://doi.org/10.1109/VTSA.2008.4530793

Maikap, S. ; Banerjee, W. ; Tzeng, P. J. et al. / Highly thermally stable and reproducible of ALD RuO₂ nanocrystal floating gate memory devices with large memory window and good retention. 2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA. 2008. pp. 50-51 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

@inproceedings{3396aae609f14f22aee9654532d60d08,

title = "Highly thermally stable and reproducible of ALD RuO2 nanocrystal floating gate memory devices with large memory window and good retention",

abstract = "Highly thermally stable (∼1000°C) and reproducible of ALD RuO 2 nanocrystal floating gate memory devices with a large hysteresis memory window of ΔV ≈14.6V under a gate voltage of ±10V have been observed. The memory window of ΔV ≈ 4.2V under a small gate voltage of ±3V is also observed. Both program and erase speeds of ΔVFB>1V@100μs are achieved under Fowler-Nordlieim injections. Excellent endurance of ΔV ≈ 8.5V, before and after 10 4 cycles and a large memory window of ΔV = 4.9 V after 10 years of retention (9\% charge loss at 20°C and ∼20\% charge loss at 85°C) are obtained. The high-performance ALD RuO2 nanocystal flash memory devices can be operated below 5V.",

author = "S. Maikap and W. Banerjee and Tzeng, \{P. J.\} and Wang, \{T. Y.\} and Lin, \{C. H.\} and Tien, \{T. C.\} and Lee, \{L. S.\} and Yang, \{J. R.\} and Kao, \{M. J.\} and Tsai, \{M. J.\}",

year = "2008",

doi = "10.1109/VTSA.2008.4530793",

language = "英语",

isbn = "9781424416158",

series = "International Symposium on VLSI Technology, Systems, and Applications, Proceedings",

pages = "50--51",

booktitle = "2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA",

note = "2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA ; Conference date: 21-04-2008 Through 23-04-2008",

}

Maikap, S, Banerjee, W, Tzeng, PJ, Wang, TY, Lin, CH, Tien, TC, Lee, LS, Yang, JR, Kao, MJ & Tsai, MJ 2008, Highly thermally stable and reproducible of ALD RuO₂ nanocrystal floating gate memory devices with large memory window and good retention. in 2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA., 4530793, International Symposium on VLSI Technology, Systems, and Applications, Proceedings, pp. 50-51, 2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA, Hsinchu, Taiwan, 21/04/08. https://doi.org/10.1109/VTSA.2008.4530793

Highly thermally stable and reproducible of ALD RuO₂ nanocrystal floating gate memory devices with large memory window and good retention. / Maikap, S.; Banerjee, W.; Tzeng, P. J. et al.
2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA. 2008. p. 50-51 4530793 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

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AU - Maikap, S.

AU - Banerjee, W.

AU - Tzeng, P. J.

AU - Wang, T. Y.

AU - Lin, C. H.

AU - Tien, T. C.

AU - Lee, L. S.

AU - Yang, J. R.

AU - Kao, M. J.

AU - Tsai, M. J.

PY - 2008

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N2 - Highly thermally stable (∼1000°C) and reproducible of ALD RuO 2 nanocrystal floating gate memory devices with a large hysteresis memory window of ΔV ≈14.6V under a gate voltage of ±10V have been observed. The memory window of ΔV ≈ 4.2V under a small gate voltage of ±3V is also observed. Both program and erase speeds of ΔVFB>1V@100μs are achieved under Fowler-Nordlieim injections. Excellent endurance of ΔV ≈ 8.5V, before and after 10 4 cycles and a large memory window of ΔV = 4.9 V after 10 years of retention (9% charge loss at 20°C and ∼20% charge loss at 85°C) are obtained. The high-performance ALD RuO2 nanocystal flash memory devices can be operated below 5V.

AB - Highly thermally stable (∼1000°C) and reproducible of ALD RuO 2 nanocrystal floating gate memory devices with a large hysteresis memory window of ΔV ≈14.6V under a gate voltage of ±10V have been observed. The memory window of ΔV ≈ 4.2V under a small gate voltage of ±3V is also observed. Both program and erase speeds of ΔVFB>1V@100μs are achieved under Fowler-Nordlieim injections. Excellent endurance of ΔV ≈ 8.5V, before and after 10 4 cycles and a large memory window of ΔV = 4.9 V after 10 years of retention (9% charge loss at 20°C and ∼20% charge loss at 85°C) are obtained. The high-performance ALD RuO2 nanocystal flash memory devices can be operated below 5V.

UR - https://www.scopus.com/pages/publications/49049088914

U2 - 10.1109/VTSA.2008.4530793

DO - 10.1109/VTSA.2008.4530793

M3 - 会议稿件

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SN - 9781424416158

T3 - International Symposium on VLSI Technology, Systems, and Applications, Proceedings

SP - 50

EP - 51

BT - 2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA

T2 - 2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA

Y2 - 21 April 2008 through 23 April 2008

ER -

Maikap S, Banerjee W, Tzeng PJ, Wang TY, Lin CH, Tien TC et al. Highly thermally stable and reproducible of ALD RuO₂ nanocrystal floating gate memory devices with large memory window and good retention. In 2008 International Symposium on VLSI Technology, Systems and Applications, VLSI-TSA. 2008. p. 50-51. 4530793. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). doi: 10.1109/VTSA.2008.4530793