Hole Injection Effect and Dynamic Characteristic Analysis of Normally Off p-GaN HEMT with AlGaN Cap Layer on Low-Resistivity SiC Substrate

Hsiang Chun Wang; Chia Hao Liu; Chong Rong Huang; Hsien Chin Chiu; Hsuan Ling Kao; Xinke Liu

doi:10.3390/mi13050807

Hole Injection Effect and Dynamic Characteristic Analysis of Normally Off p-GaN HEMT with AlGaN Cap Layer on Low-Resistivity SiC Substrate

Hsiang Chun Wang, Chia Hao Liu, Chong Rong Huang, Hsien Chin Chiu^*, Hsuan Ling Kao, Xinke Liu

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Contribution to journal › Journal Article › peer-review

2 Scopus citations

Abstract

A p-GaN HEMT with an AlGaN cap layer was grown on a low resistance SiC substrate. The AlGaN cap layer had a wide band gap which can effectively suppress hole injection and improve gate reliability. In addition, we selected a 0° angle and low resistance SiC substrate which not only substantially reduced the number of lattice dislocation defects caused by the heterogeneous junction but also greatly reduced the overall cost. The device exhibited a favorable gate voltage swing of 18.5 V (@IGS = 1 mA/mm) and an off-state breakdown voltage of 763 V. The device dynamic characteristics and hole injection behavior were analyzed using a pulse measurement system, and Ron was found to increase and VTH to shift under the gate lag effect.

Original language	English
Article number	807
Journal	Micromachines
Volume	13
Issue number	5
DOIs	https://doi.org/10.3390/mi13050807
State	Published - 05 2022

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Publisher Copyright:
© 2022 by the authors. Licensee MDPI, Basel, Switzerland.

Keywords

VTH shifting
dynamic Ron
hole injection
normally-off
p-GaN E-mode HEMT

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10.3390/mi13050807

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title = "Hole Injection Effect and Dynamic Characteristic Analysis of Normally Off p-GaN HEMT with AlGaN Cap Layer on Low-Resistivity SiC Substrate",

abstract = "A p-GaN HEMT with an AlGaN cap layer was grown on a low resistance SiC substrate. The AlGaN cap layer had a wide band gap which can effectively suppress hole injection and improve gate reliability. In addition, we selected a 0° angle and low resistance SiC substrate which not only substantially reduced the number of lattice dislocation defects caused by the heterogeneous junction but also greatly reduced the overall cost. The device exhibited a favorable gate voltage swing of 18.5 V (@IGS = 1 mA/mm) and an off-state breakdown voltage of 763 V. The device dynamic characteristics and hole injection behavior were analyzed using a pulse measurement system, and Ron was found to increase and VTH to shift under the gate lag effect.",

keywords = "VTH shifting, dynamic Ron, hole injection, normally-off, p-GaN E-mode HEMT",

author = "Wang, {Hsiang Chun} and Liu, {Chia Hao} and Huang, {Chong Rong} and Chiu, {Hsien Chin} and Kao, {Hsuan Ling} and Xinke Liu",

note = "Publisher Copyright: {\textcopyright} 2022 by the authors. Licensee MDPI, Basel, Switzerland.",

year = "2022",

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doi = "10.3390/mi13050807",

language = "英语",

volume = "13",

journal = "Micromachines",

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T1 - Hole Injection Effect and Dynamic Characteristic Analysis of Normally Off p-GaN HEMT with AlGaN Cap Layer on Low-Resistivity SiC Substrate

AU - Wang, Hsiang Chun

AU - Liu, Chia Hao

AU - Huang, Chong Rong

AU - Chiu, Hsien Chin

AU - Kao, Hsuan Ling

AU - Liu, Xinke

PY - 2022/5

Y1 - 2022/5

N2 - A p-GaN HEMT with an AlGaN cap layer was grown on a low resistance SiC substrate. The AlGaN cap layer had a wide band gap which can effectively suppress hole injection and improve gate reliability. In addition, we selected a 0° angle and low resistance SiC substrate which not only substantially reduced the number of lattice dislocation defects caused by the heterogeneous junction but also greatly reduced the overall cost. The device exhibited a favorable gate voltage swing of 18.5 V (@IGS = 1 mA/mm) and an off-state breakdown voltage of 763 V. The device dynamic characteristics and hole injection behavior were analyzed using a pulse measurement system, and Ron was found to increase and VTH to shift under the gate lag effect.

AB - A p-GaN HEMT with an AlGaN cap layer was grown on a low resistance SiC substrate. The AlGaN cap layer had a wide band gap which can effectively suppress hole injection and improve gate reliability. In addition, we selected a 0° angle and low resistance SiC substrate which not only substantially reduced the number of lattice dislocation defects caused by the heterogeneous junction but also greatly reduced the overall cost. The device exhibited a favorable gate voltage swing of 18.5 V (@IGS = 1 mA/mm) and an off-state breakdown voltage of 763 V. The device dynamic characteristics and hole injection behavior were analyzed using a pulse measurement system, and Ron was found to increase and VTH to shift under the gate lag effect.

KW - VTH shifting

KW - dynamic Ron

KW - hole injection

KW - normally-off

KW - p-GaN E-mode HEMT

UR - http://www.scopus.com/inward/record.url?scp=85131131686&partnerID=8YFLogxK

U2 - 10.3390/mi13050807

DO - 10.3390/mi13050807

M3 - 文章

AN - SCOPUS:85131131686

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VL - 13

JO - Micromachines

JF - Micromachines

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M1 - 807

ER -

Hole Injection Effect and Dynamic Characteristic Analysis of Normally Off p-GaN HEMT with AlGaN Cap Layer on Low-Resistivity SiC Substrate

Abstract

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Keywords

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