Hole Injection Effect and Dynamic Characteristics Analysis of Normally-Off p-GaN HEMT with AlGaN Cap layer on Low Resistivity SiC substrate

Chia Hao Liu; Hsien Chin Chiu; Hsiang Chun Wang; Chong Rong Haung

Hole Injection Effect and Dynamic Characteristics Analysis of Normally-Off p-GaN HEMT with AlGaN Cap layer on Low Resistivity SiC substrate

Chia Hao Liu, Hsien Chin Chiu, Hsiang Chun Wang, Chong Rong Haung

Department of Electronic Engineering

Chang Gung University

Research output: Contribution to conference › Conference Paper › peer-review

Abstract

p-GaN HEMT with AlGaN cap layer was grown on a low-resistance SiC substrate. The wide band gap material AlGaN as the cap layer, which can effectively suppress the holes injection and achieve the purpose of improving the gate reliability. In addition, we chose a zero-degree angle and low-resistance SiC substrate, which not only greatly reduces the lattice dislocation defects caused by the heterogeneous junction, but also greatly reduces the overall cost. The device shows the nice gate voltage swing of 18.5V (@IGS=1mA/mm) and Off-state breakdown voltage of 763V. Especially, the dynamic characteristics and hole injection behavior was analyzed by pulse measurement, which caused Ron increasing and VTH shifting under the gate lag effect.

Original language	English
Pages	379-382
Number of pages	4
State	Published - 2022
Event	2022 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2022 - Monterey, United States Duration: 09 05 2022 → 12 05 2022

Conference

Conference	2022 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2022
Country/Territory	United States
City	Monterey
Period	09/05/22 → 12/05/22

Bibliographical note

Publisher Copyright:
© 2022 MANTECH 2022. All rights reserved.

Keywords

TCAD simulation
gate reliability
normally-off
p-GaN gate HEMT
p-n junction

Cite this

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title = "Hole Injection Effect and Dynamic Characteristics Analysis of Normally-Off p-GaN HEMT with AlGaN Cap layer on Low Resistivity SiC substrate",

abstract = "p-GaN HEMT with AlGaN cap layer was grown on a low-resistance SiC substrate. The wide band gap material AlGaN as the cap layer, which can effectively suppress the holes injection and achieve the purpose of improving the gate reliability. In addition, we chose a zero-degree angle and low-resistance SiC substrate, which not only greatly reduces the lattice dislocation defects caused by the heterogeneous junction, but also greatly reduces the overall cost. The device shows the nice gate voltage swing of 18.5V (@IGS=1mA/mm) and Off-state breakdown voltage of 763V. Especially, the dynamic characteristics and hole injection behavior was analyzed by pulse measurement, which caused Ron increasing and VTH shifting under the gate lag effect.",

keywords = "TCAD simulation, gate reliability, normally-off, p-GaN gate HEMT, p-n junction",

author = "Liu, \{Chia Hao\} and Chiu, \{Hsien Chin\} and Wang, \{Hsiang Chun\} and Haung, \{Chong Rong\}",

note = "Publisher Copyright: {\textcopyright} 2022 MANTECH 2022. All rights reserved.; 2022 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2022 ; Conference date: 09-05-2022 Through 12-05-2022",

year = "2022",

language = "英语",

pages = "379--382",

}

Hole Injection Effect and Dynamic Characteristics Analysis of Normally-Off p-GaN HEMT with AlGaN Cap layer on Low Resistivity SiC substrate. / Liu, Chia Hao; Chiu, Hsien Chin; Wang, Hsiang Chun et al.
2022. 379-382 Paper presented at 2022 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2022, Monterey, United States.

Research output: Contribution to conference › Conference Paper › peer-review

TY - CONF

T1 - Hole Injection Effect and Dynamic Characteristics Analysis of Normally-Off p-GaN HEMT with AlGaN Cap layer on Low Resistivity SiC substrate

AU - Liu, Chia Hao

AU - Chiu, Hsien Chin

AU - Wang, Hsiang Chun

AU - Haung, Chong Rong

PY - 2022

Y1 - 2022

N2 - p-GaN HEMT with AlGaN cap layer was grown on a low-resistance SiC substrate. The wide band gap material AlGaN as the cap layer, which can effectively suppress the holes injection and achieve the purpose of improving the gate reliability. In addition, we chose a zero-degree angle and low-resistance SiC substrate, which not only greatly reduces the lattice dislocation defects caused by the heterogeneous junction, but also greatly reduces the overall cost. The device shows the nice gate voltage swing of 18.5V (@IGS=1mA/mm) and Off-state breakdown voltage of 763V. Especially, the dynamic characteristics and hole injection behavior was analyzed by pulse measurement, which caused Ron increasing and VTH shifting under the gate lag effect.

AB - p-GaN HEMT with AlGaN cap layer was grown on a low-resistance SiC substrate. The wide band gap material AlGaN as the cap layer, which can effectively suppress the holes injection and achieve the purpose of improving the gate reliability. In addition, we chose a zero-degree angle and low-resistance SiC substrate, which not only greatly reduces the lattice dislocation defects caused by the heterogeneous junction, but also greatly reduces the overall cost. The device shows the nice gate voltage swing of 18.5V (@IGS=1mA/mm) and Off-state breakdown voltage of 763V. Especially, the dynamic characteristics and hole injection behavior was analyzed by pulse measurement, which caused Ron increasing and VTH shifting under the gate lag effect.

KW - TCAD simulation

KW - gate reliability

KW - normally-off

KW - p-GaN gate HEMT

KW - p-n junction

UR - https://www.scopus.com/pages/publications/85144129739

M3 - 论文

AN - SCOPUS:85144129739

SP - 379

EP - 382

T2 - 2022 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2022

Y2 - 9 May 2022 through 12 May 2022

ER -

Hole Injection Effect and Dynamic Characteristics Analysis of Normally-Off p-GaN HEMT with AlGaN Cap layer on Low Resistivity SiC substrate

Abstract

Conference

Bibliographical note

Keywords

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