Hole mobility enhancement of Si0.2Ge0.8 quantum well channel on Si

C. Y. Peng; F. Yuan; C. Y. Yu; P. S. Kuo; M. H. Lee; S. Maikap; C. H. Hsu; C. W. Liu

doi:10.1063/1.2400394

Hole mobility enhancement of Si_0.2Ge_0.8 quantum well channel on Si

C. Y. Peng, F. Yuan, C. Y. Yu, P. S. Kuo, M. H. Lee, S. Maikap, C. H. Hsu, C. W. Liu^*

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Contribution to journal › Journal Article › peer-review

27 Scopus citations

Abstract

The ultrathin strained Si0.2 Ge0.8 quantum well channel (∼5 nm) directly grown on Si substrates is demonstrated with low defect density and high hole mobility. The quantum well Si0.2 Ge0.8 channel reveals an ∼3.2 times hole current enhancement and an ∼3 times hole mobility enhancement as compared with the bulk Si channel. The output current-voltage characteristics under the external mechanical strain confirm the compressive strain in the channel. The external compressive strain further enhances the hole mobility in a Si0.2 Ge0.8 channel.

Original language	English
Article number	012114
Journal	Applied Physics Letters
Volume	90
Issue number	1
DOIs	https://doi.org/10.1063/1.2400394
State	Published - 2007

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title = "Hole mobility enhancement of Si0.2Ge0.8 quantum well channel on Si",

abstract = "The ultrathin strained Si0.2 Ge0.8 quantum well channel (∼5 nm) directly grown on Si substrates is demonstrated with low defect density and high hole mobility. The quantum well Si0.2 Ge0.8 channel reveals an ∼3.2 times hole current enhancement and an ∼3 times hole mobility enhancement as compared with the bulk Si channel. The output current-voltage characteristics under the external mechanical strain confirm the compressive strain in the channel. The external compressive strain further enhances the hole mobility in a Si0.2 Ge0.8 channel.",

author = "Peng, {C. Y.} and F. Yuan and Yu, {C. Y.} and Kuo, {P. S.} and Lee, {M. H.} and S. Maikap and Hsu, {C. H.} and Liu, {C. W.}",

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doi = "10.1063/1.2400394",

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T1 - Hole mobility enhancement of Si0.2Ge0.8 quantum well channel on Si

AU - Peng, C. Y.

AU - Yuan, F.

AU - Yu, C. Y.

AU - Kuo, P. S.

AU - Lee, M. H.

AU - Maikap, S.

AU - Hsu, C. H.

AU - Liu, C. W.

PY - 2007

Y1 - 2007

N2 - The ultrathin strained Si0.2 Ge0.8 quantum well channel (∼5 nm) directly grown on Si substrates is demonstrated with low defect density and high hole mobility. The quantum well Si0.2 Ge0.8 channel reveals an ∼3.2 times hole current enhancement and an ∼3 times hole mobility enhancement as compared with the bulk Si channel. The output current-voltage characteristics under the external mechanical strain confirm the compressive strain in the channel. The external compressive strain further enhances the hole mobility in a Si0.2 Ge0.8 channel.

AB - The ultrathin strained Si0.2 Ge0.8 quantum well channel (∼5 nm) directly grown on Si substrates is demonstrated with low defect density and high hole mobility. The quantum well Si0.2 Ge0.8 channel reveals an ∼3.2 times hole current enhancement and an ∼3 times hole mobility enhancement as compared with the bulk Si channel. The output current-voltage characteristics under the external mechanical strain confirm the compressive strain in the channel. The external compressive strain further enhances the hole mobility in a Si0.2 Ge0.8 channel.

UR - http://www.scopus.com/inward/record.url?scp=33846096826&partnerID=8YFLogxK

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VL - 90

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 1

M1 - 012114

ER -

Hole mobility enhancement of Si_0.2Ge_0.8 quantum well channel on Si

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