Hysteresis in gadolinium oxide metal-oxide-semiconductor capacitors

Li Zen Hsieh*, Hong Hsi Ko, Ping Yu Kuei, Liann Be Chang, Ming Jer Jeng

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

7 Scopus citations


This investigation explores how oxidation affects the gadolinium oxide capacitor and the corresponding Gd2 O3 hysteresis phenomenon. The current-voltage varied with Gd2 O3 thickness and a charged capacitance voltage (C-V) curve with a left shift is also observed in experimental results. The breakdown voltages rise with increasing oxidation time, while the corresponding C-V hysteresis gaps decrease with increasing oxidation time.

Original languageEnglish
Article number076110
JournalJournal of Applied Physics
Issue number7
StatePublished - 01 10 2005


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