Hysteresis in gadolinium oxide metal-oxide-semiconductor capacitors

Li Zen Hsieh; Hong Hsi Ko; Ping Yu Kuei; Liann Be Chang; Ming Jer Jeng

doi:10.1063/1.2084333

Hysteresis in gadolinium oxide metal-oxide-semiconductor capacitors

Li Zen Hsieh^*, Hong Hsi Ko, Ping Yu Kuei, Liann Be Chang, Ming Jer Jeng

^*Corresponding author for this work

Graduate Institute of Electro-Optical Engineering

Research output: Contribution to journal › Journal Article › peer-review

7 Scopus citations

Abstract

This investigation explores how oxidation affects the gadolinium oxide capacitor and the corresponding Gd2 O3 hysteresis phenomenon. The current-voltage varied with Gd2 O3 thickness and a charged capacitance voltage (C-V) curve with a left shift is also observed in experimental results. The breakdown voltages rise with increasing oxidation time, while the corresponding C-V hysteresis gaps decrease with increasing oxidation time.

Original language	English
Article number	076110
Journal	Journal of Applied Physics
Volume	98
Issue number	7
DOIs	https://doi.org/10.1063/1.2084333
State	Published - 01 10 2005

Access to Document

10.1063/1.2084333

Cite this

@article{25b942985a4f4ca3a718e66b1e823ab3,

title = "Hysteresis in gadolinium oxide metal-oxide-semiconductor capacitors",

abstract = "This investigation explores how oxidation affects the gadolinium oxide capacitor and the corresponding Gd2 O3 hysteresis phenomenon. The current-voltage varied with Gd2 O3 thickness and a charged capacitance voltage (C-V) curve with a left shift is also observed in experimental results. The breakdown voltages rise with increasing oxidation time, while the corresponding C-V hysteresis gaps decrease with increasing oxidation time.",

author = "Hsieh, {Li Zen} and Ko, {Hong Hsi} and Kuei, {Ping Yu} and Chang, {Liann Be} and Jeng, {Ming Jer}",

year = "2005",

month = oct,

day = "1",

doi = "10.1063/1.2084333",

language = "英语",

volume = "98",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "7",

}

TY - JOUR

T1 - Hysteresis in gadolinium oxide metal-oxide-semiconductor capacitors

AU - Hsieh, Li Zen

AU - Ko, Hong Hsi

AU - Kuei, Ping Yu

AU - Chang, Liann Be

AU - Jeng, Ming Jer

PY - 2005/10/1

Y1 - 2005/10/1

N2 - This investigation explores how oxidation affects the gadolinium oxide capacitor and the corresponding Gd2 O3 hysteresis phenomenon. The current-voltage varied with Gd2 O3 thickness and a charged capacitance voltage (C-V) curve with a left shift is also observed in experimental results. The breakdown voltages rise with increasing oxidation time, while the corresponding C-V hysteresis gaps decrease with increasing oxidation time.

AB - This investigation explores how oxidation affects the gadolinium oxide capacitor and the corresponding Gd2 O3 hysteresis phenomenon. The current-voltage varied with Gd2 O3 thickness and a charged capacitance voltage (C-V) curve with a left shift is also observed in experimental results. The breakdown voltages rise with increasing oxidation time, while the corresponding C-V hysteresis gaps decrease with increasing oxidation time.

UR - http://www.scopus.com/inward/record.url?scp=27144463614&partnerID=8YFLogxK

U2 - 10.1063/1.2084333

DO - 10.1063/1.2084333

M3 - 文章

AN - SCOPUS:27144463614

SN - 0021-8979

VL - 98

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 7

M1 - 076110

ER -

Hysteresis in gadolinium oxide metal-oxide-semiconductor capacitors

Abstract

Access to Document

Other files and links

Fingerprint

Cite this