Hysteresis in gadolinium oxide metal-oxide-semiconductor capacitors

Li Zen Hsieh; Hong Hsi Ko; Ping Yu Kuei; Liann Be Chang; Ming Jer Jeng

doi:10.1063/1.2084333

Hysteresis in gadolinium oxide metal-oxide-semiconductor capacitors

Li Zen Hsieh^*
, Hong Hsi Ko
, Ping Yu Kuei
, Liann Be Chang
, Ming Jer Jeng

^*Corresponding author for this work

National Defense University Taiwan
Chang Gung University
St. John's University Taiwan

Research output: Contribution to journal › Journal Article › peer-review

7 Scopus citations

Abstract

This investigation explores how oxidation affects the gadolinium oxide capacitor and the corresponding Gd2 O3 hysteresis phenomenon. The current-voltage varied with Gd2 O3 thickness and a charged capacitance voltage (C-V) curve with a left shift is also observed in experimental results. The breakdown voltages rise with increasing oxidation time, while the corresponding C-V hysteresis gaps decrease with increasing oxidation time.

Original language	English
Article number	076110
Journal	Journal of Applied Physics
Volume	98
Issue number	7
DOIs	https://doi.org/10.1063/1.2084333
State	Published - 01 10 2005
Externally published	Yes

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title = "Hysteresis in gadolinium oxide metal-oxide-semiconductor capacitors",

abstract = "This investigation explores how oxidation affects the gadolinium oxide capacitor and the corresponding Gd2 O3 hysteresis phenomenon. The current-voltage varied with Gd2 O3 thickness and a charged capacitance voltage (C-V) curve with a left shift is also observed in experimental results. The breakdown voltages rise with increasing oxidation time, while the corresponding C-V hysteresis gaps decrease with increasing oxidation time.",

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AU - Hsieh, Li Zen

AU - Ko, Hong Hsi

AU - Kuei, Ping Yu

AU - Chang, Liann Be

AU - Jeng, Ming Jer

PY - 2005/10/1

Y1 - 2005/10/1

N2 - This investigation explores how oxidation affects the gadolinium oxide capacitor and the corresponding Gd2 O3 hysteresis phenomenon. The current-voltage varied with Gd2 O3 thickness and a charged capacitance voltage (C-V) curve with a left shift is also observed in experimental results. The breakdown voltages rise with increasing oxidation time, while the corresponding C-V hysteresis gaps decrease with increasing oxidation time.

AB - This investigation explores how oxidation affects the gadolinium oxide capacitor and the corresponding Gd2 O3 hysteresis phenomenon. The current-voltage varied with Gd2 O3 thickness and a charged capacitance voltage (C-V) curve with a left shift is also observed in experimental results. The breakdown voltages rise with increasing oxidation time, while the corresponding C-V hysteresis gaps decrease with increasing oxidation time.

UR - https://www.scopus.com/pages/publications/27144463614

U2 - 10.1063/1.2084333

DO - 10.1063/1.2084333

M3 - 文章

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JO - Journal of Applied Physics

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ER -

Hysteresis in gadolinium oxide metal-oxide-semiconductor capacitors

Abstract

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