Immobilization of enzyme and antibody on ALD-HfO 2-EIS structure by NH 3 plasma treatment

I. Shun Wang, Yi Ting Lin, Chi Hsien Huang, Tseng Fu Lu, Cheng En Lue, Polung Yang, Dorota G. Pijanswska, Chia Ming Yang, Jer Chyi Wang, Jau Song Yu, Yu Sun Chang, Chou Chien, Chao Sung Lai*

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

12 Scopus citations

Abstract

Thin hafnium oxide layers deposited by an atomic layer deposition system were investigated as the sensing membrane of the electrolyte-insulator-semiconductor structure. Moreover, a post-remote NH 3 plasma treatment was proposed to replace the complicated silanization procedure for enzyme immobilization. Compared to conventional methods using chemical procedures, remote NH 3 plasma treatment reduces the processing steps and time. The results exhibited that urea and antigen can be successfully detected, which indicated that the immobilization process is correct.

Original languageEnglish
JournalNanoscale Research Letters
Volume7
DOIs
StatePublished - 2012

Keywords

  • Remote plasma
  • Silanization procedure
  • Surface functionalization

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