@inproceedings{b49edf86d7fd414aa7db2c1a78c7a545,
title = "Impact of AlOx interfacial layer and switching mechanism in W/AlOx/TaOx/TiN RRAMs",
abstract = "Effects of AlOx interfacial layer in the W/AlO x/TaOx/TiN structures have been investigated for the first time. This RRAM device shows long endurance of 106 cycles and good retention at 85°C for a low current compliance of 100 μA. A physics based simulation is studied to understand the set and reset mechanism of RRAM. The nature of ions migration, potential profile and temperature of filament during switching is explained using numerical simulation done by MATLAB.",
keywords = "AlOx, MATLAB simulation, RRAM interfacial layer, TaOx, switching mechanism",
author = "Somsubhra Chakrabarti and Debanjan Jana and Mrinmoy Dutta and Siddheswar Maikap and Chen, \{Yi Yan\} and Yang, \{Jer Ren\}",
year = "2014",
doi = "10.1109/IMW.2014.6849394",
language = "英语",
isbn = "9781479935949",
series = "2014 IEEE 6th International Memory Workshop, IMW 2014",
publisher = "IEEE Computer Society",
booktitle = "2014 IEEE 6th International Memory Workshop, IMW 2014",
address = "美国",
note = "2014 IEEE 6th International Memory Workshop, IMW 2014 ; Conference date: 18-05-2014 Through 21-05-2014",
}