Impact of Carbon on the Deactivation Behaviors of Boron and Phosphorus in Preamorphized Silicon

Ruey Dar Chang, Hsueh Chun Liao, Jui Chang Lin, Jung Ruey Tsai

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

Silicon wafers were preamorphized to investigate the impact of carbon on the deactivation behaviors of boron and phosphorus. The boron deactivation caused by carbon was observed with solid phase epitaxial regrowth (SPER) at the beginning of rapid thermal annealing (RTA) at 600 °C. However, carbon reduced further boron deactivation when interstitials were released from end-of-range (EOR) defects during subsequent furnace annealing (FA) at 800 °C. Phosphorus deactivation was enhanced by carbon during RTA at 600 °C. Such deactivation was enlarged with further FA at 800 and 850 °C. This indicates that the reaction between carbon and phosphorus primarily occurred in crystalline silicon and the reaction was not associated with excess interstitials.

Original languageEnglish
Title of host publication2018 22nd International Conference on Ion Implantation Technology, IIT 2018 - Proceedings
EditorsHeiner Ryssel, Volker Haublein
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages86-89
Number of pages4
ISBN (Electronic)9781538668283
DOIs
StatePublished - 09 2018
Event22nd International Conference on Ion Implantation Technology, IIT 2018 - Wurzburg, Germany
Duration: 16 09 201821 09 2018

Publication series

NameProceedings of the International Conference on Ion Implantation Technology
Volume2018-September

Conference

Conference22nd International Conference on Ion Implantation Technology, IIT 2018
Country/TerritoryGermany
CityWurzburg
Period16/09/1821/09/18

Bibliographical note

Publisher Copyright:
© 2018 IEEE.

Keywords

  • boron
  • carbon
  • deactivation
  • phosphorus
  • preamorphization

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