Impact of Carbon on the Deactivation Behaviors of Boron and Phosphorus in Preamorphized Silicon

Ruey Dar Chang; Hsueh Chun Liao; Jui Chang Lin; Jung Ruey Tsai

doi:10.1109/IIT.2018.8807894

Impact of Carbon on the Deactivation Behaviors of Boron and Phosphorus in Preamorphized Silicon

Ruey Dar Chang
, Hsueh Chun Liao
, Jui Chang Lin
, Jung Ruey Tsai

Department of Electronic Engineering

Chang Gung University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

Silicon wafers were preamorphized to investigate the impact of carbon on the deactivation behaviors of boron and phosphorus. The boron deactivation caused by carbon was observed with solid phase epitaxial regrowth (SPER) at the beginning of rapid thermal annealing (RTA) at 600 °C. However, carbon reduced further boron deactivation when interstitials were released from end-of-range (EOR) defects during subsequent furnace annealing (FA) at 800 °C. Phosphorus deactivation was enhanced by carbon during RTA at 600 °C. Such deactivation was enlarged with further FA at 800 and 850 °C. This indicates that the reaction between carbon and phosphorus primarily occurred in crystalline silicon and the reaction was not associated with excess interstitials.

Original language	English
Title of host publication	2018 22nd International Conference on Ion Implantation Technology, IIT 2018 - Proceedings
Editors	Heiner Ryssel, Volker Haublein
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	86-89
Number of pages	4
ISBN (Electronic)	9781538668283
DOIs	https://doi.org/10.1109/IIT.2018.8807894
State	Published - 09 2018
Event	22nd International Conference on Ion Implantation Technology, IIT 2018 - Wurzburg, Germany Duration: 16 09 2018 → 21 09 2018

Publication series

Name	Proceedings of the International Conference on Ion Implantation Technology
Volume	2018-September

Conference

Conference	22nd International Conference on Ion Implantation Technology, IIT 2018
Country/Territory	Germany
City	Wurzburg
Period	16/09/18 → 21/09/18

Bibliographical note

Publisher Copyright:
© 2018 IEEE.

Keywords

boron
carbon
deactivation
phosphorus
preamorphization

Access to Document

10.1109/IIT.2018.8807894

Cite this

Chang, R. D., Liao, H. C., Lin, J. C., & Tsai, J. R. (2018). Impact of Carbon on the Deactivation Behaviors of Boron and Phosphorus in Preamorphized Silicon. In H. Ryssel, & V. Haublein (Eds.), 2018 22nd International Conference on Ion Implantation Technology, IIT 2018 - Proceedings (pp. 86-89). Article 8807894 (Proceedings of the International Conference on Ion Implantation Technology; Vol. 2018-September). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IIT.2018.8807894

Chang, Ruey Dar ; Liao, Hsueh Chun ; Lin, Jui Chang et al. / Impact of Carbon on the Deactivation Behaviors of Boron and Phosphorus in Preamorphized Silicon. 2018 22nd International Conference on Ion Implantation Technology, IIT 2018 - Proceedings. editor / Heiner Ryssel ; Volker Haublein. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 86-89 (Proceedings of the International Conference on Ion Implantation Technology).

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title = "Impact of Carbon on the Deactivation Behaviors of Boron and Phosphorus in Preamorphized Silicon",

abstract = "Silicon wafers were preamorphized to investigate the impact of carbon on the deactivation behaviors of boron and phosphorus. The boron deactivation caused by carbon was observed with solid phase epitaxial regrowth (SPER) at the beginning of rapid thermal annealing (RTA) at 600 °C. However, carbon reduced further boron deactivation when interstitials were released from end-of-range (EOR) defects during subsequent furnace annealing (FA) at 800 °C. Phosphorus deactivation was enhanced by carbon during RTA at 600 °C. Such deactivation was enlarged with further FA at 800 and 850 °C. This indicates that the reaction between carbon and phosphorus primarily occurred in crystalline silicon and the reaction was not associated with excess interstitials.",

keywords = "boron, carbon, deactivation, phosphorus, preamorphization",

author = "Chang, \{Ruey Dar\} and Liao, \{Hsueh Chun\} and Lin, \{Jui Chang\} and Tsai, \{Jung Ruey\}",

note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 22nd International Conference on Ion Implantation Technology, IIT 2018 ; Conference date: 16-09-2018 Through 21-09-2018",

year = "2018",

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doi = "10.1109/IIT.2018.8807894",

language = "英语",

series = "Proceedings of the International Conference on Ion Implantation Technology",

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Chang, RD, Liao, HC, Lin, JC & Tsai, JR 2018, Impact of Carbon on the Deactivation Behaviors of Boron and Phosphorus in Preamorphized Silicon. in H Ryssel & V Haublein (eds), 2018 22nd International Conference on Ion Implantation Technology, IIT 2018 - Proceedings., 8807894, Proceedings of the International Conference on Ion Implantation Technology, vol. 2018-September, Institute of Electrical and Electronics Engineers Inc., pp. 86-89, 22nd International Conference on Ion Implantation Technology, IIT 2018, Wurzburg, Germany, 16/09/18. https://doi.org/10.1109/IIT.2018.8807894

Impact of Carbon on the Deactivation Behaviors of Boron and Phosphorus in Preamorphized Silicon. / Chang, Ruey Dar; Liao, Hsueh Chun; Lin, Jui Chang et al.
2018 22nd International Conference on Ion Implantation Technology, IIT 2018 - Proceedings. ed. / Heiner Ryssel; Volker Haublein. Institute of Electrical and Electronics Engineers Inc., 2018. p. 86-89 8807894 (Proceedings of the International Conference on Ion Implantation Technology; Vol. 2018-September).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Liao, Hsueh Chun

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PY - 2018/9

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N2 - Silicon wafers were preamorphized to investigate the impact of carbon on the deactivation behaviors of boron and phosphorus. The boron deactivation caused by carbon was observed with solid phase epitaxial regrowth (SPER) at the beginning of rapid thermal annealing (RTA) at 600 °C. However, carbon reduced further boron deactivation when interstitials were released from end-of-range (EOR) defects during subsequent furnace annealing (FA) at 800 °C. Phosphorus deactivation was enhanced by carbon during RTA at 600 °C. Such deactivation was enlarged with further FA at 800 and 850 °C. This indicates that the reaction between carbon and phosphorus primarily occurred in crystalline silicon and the reaction was not associated with excess interstitials.

AB - Silicon wafers were preamorphized to investigate the impact of carbon on the deactivation behaviors of boron and phosphorus. The boron deactivation caused by carbon was observed with solid phase epitaxial regrowth (SPER) at the beginning of rapid thermal annealing (RTA) at 600 °C. However, carbon reduced further boron deactivation when interstitials were released from end-of-range (EOR) defects during subsequent furnace annealing (FA) at 800 °C. Phosphorus deactivation was enhanced by carbon during RTA at 600 °C. Such deactivation was enlarged with further FA at 800 and 850 °C. This indicates that the reaction between carbon and phosphorus primarily occurred in crystalline silicon and the reaction was not associated with excess interstitials.

KW - boron

KW - carbon

KW - deactivation

KW - phosphorus

KW - preamorphization

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ER -

Chang RD, Liao HC, Lin JC, Tsai JR. Impact of Carbon on the Deactivation Behaviors of Boron and Phosphorus in Preamorphized Silicon. In Ryssel H, Haublein V, editors, 2018 22nd International Conference on Ion Implantation Technology, IIT 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2018. p. 86-89. 8807894. (Proceedings of the International Conference on Ion Implantation Technology). doi: 10.1109/IIT.2018.8807894

Impact of Carbon on the Deactivation Behaviors of Boron and Phosphorus in Preamorphized Silicon

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Keywords

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