Impact of high-κ TaOx thickness on the switching mechanism of resistive memory device using IrOx/TaOx/WO x/W structure

A. Prakash; S. Maikap; W. S. Chen; H. Y. Lee; F. T. Chen; M. J. Kao; M. J. Tsai

doi:10.1149/1.3700903

Impact of high-κ TaO_x thickness on the switching mechanism of resistive memory device using IrO_x/TaO_x/WO _x/W structure

A. Prakash^*, S. Maikap, W. S. Chen, H. Y. Lee, F. T. Chen, M. J. Kao, M. J. Tsai

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

The impact of switching layer thickness on the resistive memory performance and uniformity has been investigated in a simple stack of IrO _x/TaO_x/W fabricated. The formation of amorphous TaO _x and nanocrystalline WO_x layers are confirmed from HRTEM image. Bipolar resistive switching memory characteristics with small set/reset and large memory window are observed in all devices after electroforming. The observed TaO_x thickness independence of set/reset and low resistance state (LRS) is attributed to the formation of localized nano-filament in TaO_x layer. Cumulative probability plot shows tight distribution of LRS. Good data retention with a large resistance ratio of >10³ at 85°C is obtained.

Original language	English
Title of host publication	Dielectrics for Nanosystems 5
Subtitle of host publication	Materials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices
Publisher	Electrochemical Society Inc.
Pages	379-385
Number of pages	7
Edition	3
ISBN (Electronic)	9781607683131
ISBN (Print)	9781566779555
DOIs	https://doi.org/10.1149/1.3700903
State	Published - 2012
Event	5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting - Seattle, WA, United States Duration: 06 05 2012 → 10 05 2012

Publication series

Name	ECS Transactions
Number	3
Volume	45
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Conference

Conference	5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting
Country/Territory	United States
City	Seattle, WA
Period	06/05/12 → 10/05/12

Access to Document

10.1149/1.3700903

Cite this

Prakash, A., Maikap, S., Chen, W. S., Lee, H. Y., Chen, F. T., Kao, M. J., & Tsai, M. J. (2012). Impact of high-κ TaO_x thickness on the switching mechanism of resistive memory device using IrO_x/TaO_x/WO _x/W structure. In Dielectrics for Nanosystems 5: Materials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices (3 ed., pp. 379-385). (ECS Transactions; Vol. 45, No. 3). Electrochemical Society Inc.. https://doi.org/10.1149/1.3700903

Prakash, A. ; Maikap, S. ; Chen, W. S. et al. / Impact of high-κ TaO_x thickness on the switching mechanism of resistive memory device using IrO_x/TaO_x/WO _x/W structure. Dielectrics for Nanosystems 5: Materials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices. 3. ed. Electrochemical Society Inc., 2012. pp. 379-385 (ECS Transactions; 3).

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title = "Impact of high-κ TaOx thickness on the switching mechanism of resistive memory device using IrOx/TaOx/WO x/W structure",

abstract = "The impact of switching layer thickness on the resistive memory performance and uniformity has been investigated in a simple stack of IrO x/TaOx/W fabricated. The formation of amorphous TaO x and nanocrystalline WOx layers are confirmed from HRTEM image. Bipolar resistive switching memory characteristics with small set/reset and large memory window are observed in all devices after electroforming. The observed TaOx thickness independence of set/reset and low resistance state (LRS) is attributed to the formation of localized nano-filament in TaOx layer. Cumulative probability plot shows tight distribution of LRS. Good data retention with a large resistance ratio of >103 at 85°C is obtained.",

author = "A. Prakash and S. Maikap and Chen, {W. S.} and Lee, {H. Y.} and Chen, {F. T.} and Kao, {M. J.} and Tsai, {M. J.}",

year = "2012",

doi = "10.1149/1.3700903",

language = "英语",

isbn = "9781566779555",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "3",

pages = "379--385",

booktitle = "Dielectrics for Nanosystems 5",

edition = "3",

note = "5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting ; Conference date: 06-05-2012 Through 10-05-2012",

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Prakash, A, Maikap, S, Chen, WS, Lee, HY, Chen, FT, Kao, MJ & Tsai, MJ 2012, Impact of high-κ TaO_x thickness on the switching mechanism of resistive memory device using IrO_x/TaO_x/WO _x/W structure. in Dielectrics for Nanosystems 5: Materials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices. 3 edn, ECS Transactions, no. 3, vol. 45, Electrochemical Society Inc., pp. 379-385, 5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting, Seattle, WA, United States, 06/05/12. https://doi.org/10.1149/1.3700903

Impact of high-κ TaO_x thickness on the switching mechanism of resistive memory device using IrO_x/TaO_x/WO _x/W structure. / Prakash, A.; Maikap, S.; Chen, W. S. et al.
Dielectrics for Nanosystems 5: Materials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices. 3. ed. Electrochemical Society Inc., 2012. p. 379-385 (ECS Transactions; Vol. 45, No. 3).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Chen, F. T.

AU - Kao, M. J.

AU - Tsai, M. J.

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N2 - The impact of switching layer thickness on the resistive memory performance and uniformity has been investigated in a simple stack of IrO x/TaOx/W fabricated. The formation of amorphous TaO x and nanocrystalline WOx layers are confirmed from HRTEM image. Bipolar resistive switching memory characteristics with small set/reset and large memory window are observed in all devices after electroforming. The observed TaOx thickness independence of set/reset and low resistance state (LRS) is attributed to the formation of localized nano-filament in TaOx layer. Cumulative probability plot shows tight distribution of LRS. Good data retention with a large resistance ratio of >103 at 85°C is obtained.

AB - The impact of switching layer thickness on the resistive memory performance and uniformity has been investigated in a simple stack of IrO x/TaOx/W fabricated. The formation of amorphous TaO x and nanocrystalline WOx layers are confirmed from HRTEM image. Bipolar resistive switching memory characteristics with small set/reset and large memory window are observed in all devices after electroforming. The observed TaOx thickness independence of set/reset and low resistance state (LRS) is attributed to the formation of localized nano-filament in TaOx layer. Cumulative probability plot shows tight distribution of LRS. Good data retention with a large resistance ratio of >103 at 85°C is obtained.

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BT - Dielectrics for Nanosystems 5

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Prakash A, Maikap S, Chen WS, Lee HY, Chen FT, Kao MJ et al. Impact of high-κ TaO_x thickness on the switching mechanism of resistive memory device using IrO_x/TaO_x/WO _x/W structure. In Dielectrics for Nanosystems 5: Materials Science, Processing, Reliability, and Manufacturing -and- Tutorials in Nanotechnology: More than Moore - Beyond CMOS Emerging Materials and Devices. 3 ed. Electrochemical Society Inc. 2012. p. 379-385. (ECS Transactions; 3). doi: 10.1149/1.3700903