| Translated title of the contribution | 調整 TiN 緩衝層製程中氮氣流量變化對 TiN/HZO/TiN 電容之鐵電與結構特性的影響及非揮發性記憶體之應用 |
|---|---|
| Original language | English |
| Supervisors/Advisors |
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| State | Published - 2025 |
| Externally published | Yes |
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Impact of N₂ flow variations in TiN buffer layers on the ferroelectric and structural properties of TiN/HZO/TiN capacitors for nonvolatile memory applications
- 莊士霆
Research output: Types of Thesis › Master's thesis