Impact of Ti Content on Structural and Electrical Characteristics of High-κ Yb2TiO5α-InZnSnO Thin-Film Transistors

Tung Ming Pan; Bo Jung Peng; Hung Chun Wang; Jim Long Her; Bih Show Lou

doi:10.1109/LED.2017.2654199

Impact of Ti Content on Structural and Electrical Characteristics of High-κ Yb₂TiO₅α-InZnSnO Thin-Film Transistors

Tung Ming Pan^*, Bo Jung Peng, Hung Chun Wang, Jim Long Her, Bih Show Lou

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

3 Scopus citations

Abstract

In this letter, we investigated the impact of Ti content on structural properties and electrical characteristics of high-κ Yb₂TiO₅ gate dielectrics for amorphous indium-zinc-tin-oxide (α-IZTO) thin-film transistor (TFT) devices.The Yb₂TiO₅ α-IZTOTFTdevice treated at the 120 W condition exhibited excellent electrical characteristics in terms of a low threshold voltage of 0.14 V, high field-effect mobilityof 29.8 cm²/Vs, high Ion/Ioff current ratioof 2.7×108, and small subthreshold swing of 202 mV/decade.

Original language	English
Article number	7820141
Pages (from-to)	341-344
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	38
Issue number	3
DOIs	https://doi.org/10.1109/LED.2017.2654199
State	Published - 03 2017

Bibliographical note

Publisher Copyright:
© 1980-2012 IEEE.

Keywords

Amorphous indium-zinc-tin-oxide (α-IZTO)
YbTiO
thin-film transistor (TFT)

Access to Document

10.1109/LED.2017.2654199

Cite this

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title = "Impact of Ti Content on Structural and Electrical Characteristics of High-κ Yb2TiO5α-InZnSnO Thin-Film Transistors",

abstract = "In this letter, we investigated the impact of Ti content on structural properties and electrical characteristics of high-κ Yb2TiO5 gate dielectrics for amorphous indium-zinc-tin-oxide (α-IZTO) thin-film transistor (TFT) devices.The Yb2TiO5 α-IZTOTFTdevice treated at the 120 W condition exhibited excellent electrical characteristics in terms of a low threshold voltage of 0.14 V, high field-effect mobilityof 29.8 cm2/Vs, high Ion/Ioff current ratioof 2.7×108, and small subthreshold swing of 202 mV/decade.",

keywords = "Amorphous indium-zinc-tin-oxide (α-IZTO), YbTiO, thin-film transistor (TFT)",

author = "Pan, \{Tung Ming\} and Peng, \{Bo Jung\} and Wang, \{Hung Chun\} and Her, \{Jim Long\} and Lou, \{Bih Show\}",

note = "Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

year = "2017",

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doi = "10.1109/LED.2017.2654199",

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volume = "38",

pages = "341--344",

journal = "IEEE Electron Device Letters",

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T1 - Impact of Ti Content on Structural and Electrical Characteristics of High-κ Yb2TiO5α-InZnSnO Thin-Film Transistors

AU - Pan, Tung Ming

AU - Peng, Bo Jung

AU - Wang, Hung Chun

AU - Her, Jim Long

AU - Lou, Bih Show

PY - 2017/3

Y1 - 2017/3

N2 - In this letter, we investigated the impact of Ti content on structural properties and electrical characteristics of high-κ Yb2TiO5 gate dielectrics for amorphous indium-zinc-tin-oxide (α-IZTO) thin-film transistor (TFT) devices.The Yb2TiO5 α-IZTOTFTdevice treated at the 120 W condition exhibited excellent electrical characteristics in terms of a low threshold voltage of 0.14 V, high field-effect mobilityof 29.8 cm2/Vs, high Ion/Ioff current ratioof 2.7×108, and small subthreshold swing of 202 mV/decade.

AB - In this letter, we investigated the impact of Ti content on structural properties and electrical characteristics of high-κ Yb2TiO5 gate dielectrics for amorphous indium-zinc-tin-oxide (α-IZTO) thin-film transistor (TFT) devices.The Yb2TiO5 α-IZTOTFTdevice treated at the 120 W condition exhibited excellent electrical characteristics in terms of a low threshold voltage of 0.14 V, high field-effect mobilityof 29.8 cm2/Vs, high Ion/Ioff current ratioof 2.7×108, and small subthreshold swing of 202 mV/decade.

KW - Amorphous indium-zinc-tin-oxide (α-IZTO)

KW - YbTiO

KW - thin-film transistor (TFT)

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U2 - 10.1109/LED.2017.2654199

DO - 10.1109/LED.2017.2654199

M3 - 文章

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SN - 0741-3106

VL - 38

SP - 341

EP - 344

JO - IEEE Electron Device Letters

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