Impact of Ti doping in Sm2O3 dielectric on electrical characteristics of a-InGaZnO thin-film transistors

Fa Hsyang Chen; Jim Long Her; Somnath Mondal; Meng Ning Hung; Tung Ming Pan

doi:10.1063/1.4807014

Impact of Ti doping in Sm₂O₃ dielectric on electrical characteristics of a-InGaZnO thin-film transistors

Fa Hsyang Chen, Jim Long Her, Somnath Mondal, Meng Ning Hung, Tung Ming Pan

Chang Gung University

Research output: Contribution to journal › Journal Article › peer-review

35 Scopus citations

Abstract

We investigated the impact of Ti doping in the Sm₂O₃ dielectric on the electrical stress-induced instability in amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). With increasing stress time in a-IGZO TFT devices, a small initial positive shift followed by a negative shift of threshold voltage is characterized in the Sm ₂O₃ dielectric, whereas only positive shift of threshold voltage is observed for Ti-doped Sm₂O₃ dielectric. The positive shift of the threshold voltage can be explained by charge trapping in the Sm₂O₃ film and/or the Sm₂O₃/IGZO interfaces, while the negative shift of threshold voltage is probably due to the extra charges from the IGZO channel by self-heating effect.

Original language	English
Article number	193515
Journal	Applied Physics Letters
Volume	102
Issue number	19
DOIs	https://doi.org/10.1063/1.4807014
State	Published - 13 05 2013

Access to Document

10.1063/1.4807014

Cite this

@article{2b07b7f6fb4b4f8e899e96d41eec7759,

title = "Impact of Ti doping in Sm2O3 dielectric on electrical characteristics of a-InGaZnO thin-film transistors",

abstract = "We investigated the impact of Ti doping in the Sm2O3 dielectric on the electrical stress-induced instability in amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). With increasing stress time in a-IGZO TFT devices, a small initial positive shift followed by a negative shift of threshold voltage is characterized in the Sm 2O3 dielectric, whereas only positive shift of threshold voltage is observed for Ti-doped Sm2O3 dielectric. The positive shift of the threshold voltage can be explained by charge trapping in the Sm2O3 film and/or the Sm2O3/IGZO interfaces, while the negative shift of threshold voltage is probably due to the extra charges from the IGZO channel by self-heating effect.",

author = "Chen, {Fa Hsyang} and Her, {Jim Long} and Somnath Mondal and Hung, {Meng Ning} and Pan, {Tung Ming}",

year = "2013",

month = may,

day = "13",

doi = "10.1063/1.4807014",

language = "英语",

volume = "102",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "19",

}

TY - JOUR

T1 - Impact of Ti doping in Sm2O3 dielectric on electrical characteristics of a-InGaZnO thin-film transistors

AU - Chen, Fa Hsyang

AU - Her, Jim Long

AU - Mondal, Somnath

AU - Hung, Meng Ning

AU - Pan, Tung Ming

PY - 2013/5/13

Y1 - 2013/5/13

N2 - We investigated the impact of Ti doping in the Sm2O3 dielectric on the electrical stress-induced instability in amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). With increasing stress time in a-IGZO TFT devices, a small initial positive shift followed by a negative shift of threshold voltage is characterized in the Sm 2O3 dielectric, whereas only positive shift of threshold voltage is observed for Ti-doped Sm2O3 dielectric. The positive shift of the threshold voltage can be explained by charge trapping in the Sm2O3 film and/or the Sm2O3/IGZO interfaces, while the negative shift of threshold voltage is probably due to the extra charges from the IGZO channel by self-heating effect.

AB - We investigated the impact of Ti doping in the Sm2O3 dielectric on the electrical stress-induced instability in amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). With increasing stress time in a-IGZO TFT devices, a small initial positive shift followed by a negative shift of threshold voltage is characterized in the Sm 2O3 dielectric, whereas only positive shift of threshold voltage is observed for Ti-doped Sm2O3 dielectric. The positive shift of the threshold voltage can be explained by charge trapping in the Sm2O3 film and/or the Sm2O3/IGZO interfaces, while the negative shift of threshold voltage is probably due to the extra charges from the IGZO channel by self-heating effect.

UR - http://www.scopus.com/inward/record.url?scp=84877955998&partnerID=8YFLogxK

U2 - 10.1063/1.4807014

DO - 10.1063/1.4807014

M3 - 文章

AN - SCOPUS:84877955998

SN - 0003-6951

VL - 102

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

M1 - 193515

ER -

Impact of Ti doping in Sm₂O₃ dielectric on electrical characteristics of a-InGaZnO thin-film transistors

Abstract

Access to Document

Other files and links

Fingerprint

Cite this