Impacts of Asymmetry Double Gate Structure on Reliability Degradation of Thin-Film Transistor with Nanosheet Channel

William Cheng Yu Ma; Chun Jung Su; Kuo Hsing Kao; Ta Chun Cho; Jing Qiang Guo; Cheng Jun Wu; Po Ying Wu; Jia Yuan Hung

Impacts of Asymmetry Double Gate Structure on Reliability Degradation of Thin-Film Transistor with Nanosheet Channel

William Cheng Yu Ma^*, Chun Jung Su, Kuo Hsing Kao, Ta Chun Cho, Jing Qiang Guo, Cheng Jun Wu, Po Ying Wu, Jia Yuan Hung

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

This work investigates the characteristics and reliability of double-gate (DG) and single-gate (SG) mode operations in polycrystalline-silicon nanosheet transistors (TFTs). It is observed that the threshold voltage and subthreshold swing in the DG mode are lower than those in the SG mode, while the on-state current is much higher. The DG mode provides better control over the channel potential, resulting in higher electron density and field-effect mobility. Moreover, the back-gate voltage can be used to adjust the threshold voltage of the TFT in SG mode. The impact of the back-gate voltage on the reliability of the device is also studied. The results indicate that the DG mode is more reliable than the SG mode under positive gate bias stress, as the DG mode has a stronger channel potential control ability. In contrast, the back-gate voltage has little effect on the reliability of the TFT in SG mode.

Original language	English
Title of host publication	30th International Workshop on Active-Matrix Flatpanel Displays and Devices
Subtitle of host publication	TFT Technologies and FPD Materials, AM-FPD 2023 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	129-131
Number of pages	3
ISBN (Electronic)	9784991216947
State	Published - 2023
Externally published	Yes
Event	30th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2023 - Hybrid, Kyoto, Japan Duration: 04 07 2023 → 07 07 2023

Publication series

Name	30th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2023 - Proceedings

Conference

Conference	30th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2023
Country/Territory	Japan
City	Hybrid, Kyoto
Period	04/07/23 → 07/07/23

Bibliographical note

Publisher Copyright:
© 2023 FTFMD.

Cite this

Ma, W. C. Y., Su, C. J., Kao, K. H., Cho, T. C., Guo, J. Q., Wu, C. J., Wu, P. Y., & Hung, J. Y. (2023). Impacts of Asymmetry Double Gate Structure on Reliability Degradation of Thin-Film Transistor with Nanosheet Channel. In 30th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2023 - Proceedings (pp. 129-131). (30th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2023 - Proceedings). Institute of Electrical and Electronics Engineers Inc..

Ma, William Cheng Yu ; Su, Chun Jung ; Kao, Kuo Hsing et al. / Impacts of Asymmetry Double Gate Structure on Reliability Degradation of Thin-Film Transistor with Nanosheet Channel. 30th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2023 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2023. pp. 129-131 (30th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2023 - Proceedings).

@inproceedings{aae7e6fc83934cc68812763edb1a122a,

title = "Impacts of Asymmetry Double Gate Structure on Reliability Degradation of Thin-Film Transistor with Nanosheet Channel",

abstract = "This work investigates the characteristics and reliability of double-gate (DG) and single-gate (SG) mode operations in polycrystalline-silicon nanosheet transistors (TFTs). It is observed that the threshold voltage and subthreshold swing in the DG mode are lower than those in the SG mode, while the on-state current is much higher. The DG mode provides better control over the channel potential, resulting in higher electron density and field-effect mobility. Moreover, the back-gate voltage can be used to adjust the threshold voltage of the TFT in SG mode. The impact of the back-gate voltage on the reliability of the device is also studied. The results indicate that the DG mode is more reliable than the SG mode under positive gate bias stress, as the DG mode has a stronger channel potential control ability. In contrast, the back-gate voltage has little effect on the reliability of the TFT in SG mode.",

author = "Ma, {William Cheng Yu} and Su, {Chun Jung} and Kao, {Kuo Hsing} and Cho, {Ta Chun} and Guo, {Jing Qiang} and Wu, {Cheng Jun} and Wu, {Po Ying} and Hung, {Jia Yuan}",

note = "Publisher Copyright: {\textcopyright} 2023 FTFMD.; 30th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2023 ; Conference date: 04-07-2023 Through 07-07-2023",

year = "2023",

language = "英语",

series = "30th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2023 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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Ma, WCY, Su, CJ, Kao, KH, Cho, TC, Guo, JQ, Wu, CJ, Wu, PY & Hung, JY 2023, Impacts of Asymmetry Double Gate Structure on Reliability Degradation of Thin-Film Transistor with Nanosheet Channel. in 30th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2023 - Proceedings. 30th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2023 - Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 129-131, 30th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2023, Hybrid, Kyoto, Japan, 04/07/23.

Impacts of Asymmetry Double Gate Structure on Reliability Degradation of Thin-Film Transistor with Nanosheet Channel. / Ma, William Cheng Yu; Su, Chun Jung; Kao, Kuo Hsing et al.
30th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2023 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2023. p. 129-131 (30th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2023 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Impacts of Asymmetry Double Gate Structure on Reliability Degradation of Thin-Film Transistor with Nanosheet Channel

AU - Ma, William Cheng Yu

AU - Su, Chun Jung

AU - Kao, Kuo Hsing

AU - Cho, Ta Chun

AU - Guo, Jing Qiang

AU - Wu, Cheng Jun

AU - Wu, Po Ying

AU - Hung, Jia Yuan

PY - 2023

Y1 - 2023

N2 - This work investigates the characteristics and reliability of double-gate (DG) and single-gate (SG) mode operations in polycrystalline-silicon nanosheet transistors (TFTs). It is observed that the threshold voltage and subthreshold swing in the DG mode are lower than those in the SG mode, while the on-state current is much higher. The DG mode provides better control over the channel potential, resulting in higher electron density and field-effect mobility. Moreover, the back-gate voltage can be used to adjust the threshold voltage of the TFT in SG mode. The impact of the back-gate voltage on the reliability of the device is also studied. The results indicate that the DG mode is more reliable than the SG mode under positive gate bias stress, as the DG mode has a stronger channel potential control ability. In contrast, the back-gate voltage has little effect on the reliability of the TFT in SG mode.

AB - This work investigates the characteristics and reliability of double-gate (DG) and single-gate (SG) mode operations in polycrystalline-silicon nanosheet transistors (TFTs). It is observed that the threshold voltage and subthreshold swing in the DG mode are lower than those in the SG mode, while the on-state current is much higher. The DG mode provides better control over the channel potential, resulting in higher electron density and field-effect mobility. Moreover, the back-gate voltage can be used to adjust the threshold voltage of the TFT in SG mode. The impact of the back-gate voltage on the reliability of the device is also studied. The results indicate that the DG mode is more reliable than the SG mode under positive gate bias stress, as the DG mode has a stronger channel potential control ability. In contrast, the back-gate voltage has little effect on the reliability of the TFT in SG mode.

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M3 - 会议稿件

AN - SCOPUS:85175251374

T3 - 30th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2023 - Proceedings

SP - 129

EP - 131

BT - 30th International Workshop on Active-Matrix Flatpanel Displays and Devices

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 30th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2023

Y2 - 4 July 2023 through 7 July 2023

ER -

Ma WCY, Su CJ, Kao KH, Cho TC, Guo JQ, Wu CJ et al. Impacts of Asymmetry Double Gate Structure on Reliability Degradation of Thin-Film Transistor with Nanosheet Channel. In 30th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2023 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2023. p. 129-131. (30th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2023 - Proceedings).

Impacts of Asymmetry Double Gate Structure on Reliability Degradation of Thin-Film Transistor with Nanosheet Channel

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