Impacts of N2 and NH3 plasma surface treatments on high-performance LTPS-TFT with high-κ gate dielectric

Ming Wen Ma; Tien Sheng Chao; Tsung Yu Chiang; Woei Cherng Wu; Tan Fu Lei

doi:10.1109/LED.2008.2004781

Impacts of N₂ and NH₃ plasma surface treatments on high-performance LTPS-TFT with high-κ gate dielectric

Ming Wen Ma^*, Tien Sheng Chao, Tsung Yu Chiang, Woei Cherng Wu, Tan Fu Lei

^*Corresponding author for this work

National Yang Ming Chiao Tung University

Research output: Contribution to journal › Journal Article › peer-review

12 Scopus citations

Abstract

Low-temperature polycrystalline-silicon thin-film transistors (LTPS-TFTs) with high-_κ gate dielectrics and plasma surface treatments are demonstrated for the first time. Significant field-effect mobility μ_FE improvements of ∼86.0% and 112.5% are observed for LTPS-TFTs with HfO₂ gate dielectric after N₂ and NH₃ and NH₃ plasma surface treatments, respectively. In addition, the N₂ and NH₃ plasma surface treatments can also reduce surface roughness scattering to enhance the field-effect mobility μ_FE at high gate bias voltage V_G, resulting in 217.0% and 219.6% improvements in driving current, respectively. As a result, high-performance LTPS-TFT with low threshold voltage V_TH ∼0.33 V, excellent subthreshold swing S.S. ∼ 0.156 V/decade, and high field-effect mobility μ_FE ∼ 62.02 cm²/V · s would be suitable for the application of system-on-panel.

Original language	English
Pages (from-to)	1236-1238
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	29
Issue number	11
DOIs	https://doi.org/10.1109/LED.2008.2004781
State	Published - 2008
Externally published	Yes

Keywords

High-ê
Low-temperature polycrystalline-silicon thin-film transistors (LTPS-TFTs)
N plasma
NH plasma

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10.1109/LED.2008.2004781

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title = "Impacts of N2 and NH3 plasma surface treatments on high-performance LTPS-TFT with high-κ gate dielectric",

abstract = "Low-temperature polycrystalline-silicon thin-film transistors (LTPS-TFTs) with high-κ gate dielectrics and plasma surface treatments are demonstrated for the first time. Significant field-effect mobility μFE improvements of ∼86.0% and 112.5% are observed for LTPS-TFTs with HfO2 gate dielectric after N2 and NH3 and NH3 plasma surface treatments, respectively. In addition, the N2 and NH3 plasma surface treatments can also reduce surface roughness scattering to enhance the field-effect mobility μFE at high gate bias voltage VG, resulting in 217.0% and 219.6% improvements in driving current, respectively. As a result, high-performance LTPS-TFT with low threshold voltage VTH ∼0.33 V, excellent subthreshold swing S.S. ∼ 0.156 V/decade, and high field-effect mobility μFE ∼ 62.02 cm2/V · s would be suitable for the application of system-on-panel.",

keywords = "High-{\^e}, Low-temperature polycrystalline-silicon thin-film transistors (LTPS-TFTs), N plasma, NH plasma",

author = "Ma, {Ming Wen} and Chao, {Tien Sheng} and Chiang, {Tsung Yu} and Wu, {Woei Cherng} and Lei, {Tan Fu}",

year = "2008",

doi = "10.1109/LED.2008.2004781",

language = "英语",

volume = "29",

pages = "1236--1238",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "11",

}

TY - JOUR

T1 - Impacts of N2 and NH3 plasma surface treatments on high-performance LTPS-TFT with high-κ gate dielectric

AU - Ma, Ming Wen

AU - Chao, Tien Sheng

AU - Chiang, Tsung Yu

AU - Wu, Woei Cherng

AU - Lei, Tan Fu

PY - 2008

Y1 - 2008

N2 - Low-temperature polycrystalline-silicon thin-film transistors (LTPS-TFTs) with high-κ gate dielectrics and plasma surface treatments are demonstrated for the first time. Significant field-effect mobility μFE improvements of ∼86.0% and 112.5% are observed for LTPS-TFTs with HfO2 gate dielectric after N2 and NH3 and NH3 plasma surface treatments, respectively. In addition, the N2 and NH3 plasma surface treatments can also reduce surface roughness scattering to enhance the field-effect mobility μFE at high gate bias voltage VG, resulting in 217.0% and 219.6% improvements in driving current, respectively. As a result, high-performance LTPS-TFT with low threshold voltage VTH ∼0.33 V, excellent subthreshold swing S.S. ∼ 0.156 V/decade, and high field-effect mobility μFE ∼ 62.02 cm2/V · s would be suitable for the application of system-on-panel.

AB - Low-temperature polycrystalline-silicon thin-film transistors (LTPS-TFTs) with high-κ gate dielectrics and plasma surface treatments are demonstrated for the first time. Significant field-effect mobility μFE improvements of ∼86.0% and 112.5% are observed for LTPS-TFTs with HfO2 gate dielectric after N2 and NH3 and NH3 plasma surface treatments, respectively. In addition, the N2 and NH3 plasma surface treatments can also reduce surface roughness scattering to enhance the field-effect mobility μFE at high gate bias voltage VG, resulting in 217.0% and 219.6% improvements in driving current, respectively. As a result, high-performance LTPS-TFT with low threshold voltage VTH ∼0.33 V, excellent subthreshold swing S.S. ∼ 0.156 V/decade, and high field-effect mobility μFE ∼ 62.02 cm2/V · s would be suitable for the application of system-on-panel.

KW - High-ê

KW - Low-temperature polycrystalline-silicon thin-film transistors (LTPS-TFTs)

KW - N plasma

KW - NH plasma

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U2 - 10.1109/LED.2008.2004781

DO - 10.1109/LED.2008.2004781

M3 - 文章

AN - SCOPUS:55149119393

SN - 0741-3106

VL - 29

SP - 1236

EP - 1238

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 11

ER -

Impacts of N₂ and NH₃ plasma surface treatments on high-performance LTPS-TFT with high-κ gate dielectric

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Keywords

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