Abstract
In this paper, the positive bias temperature instability (PBTI) of the tunnel thin-film transistor (TFT) is well studied and compared with the conventional-TFT. The tunnel-TFT exhibits superior PBTI immunity at high temperature and shows distinct temperature dependence of PBTI from the conventional-TFT. This is due to different influences of trap-state generation on electrical behavior of the two devices. For the poly-Si tunnel-TFT featuring trap-assisted tunneling (TAT), the impact of trap-state generation on tunneling probability is found to be temperature dependent. At lower temperature, the TAT current of a tunnel-TFT is reduced due to the lower interband transition probability, resulting in pronounced temperature dependence on the additional generated trap states after electrical stress. Therefore, the worst PBTI behavior of a tunnel-TFT occurs when the device is stressed at low temperature. Our results may be helpful to further reliability investigation of tunneling devices.
| Original language | English |
|---|---|
| Pages (from-to) | 1363-1369 |
| Number of pages | 7 |
| Journal | IEEE Transactions on Electron Devices |
| Volume | 65 |
| Issue number | 4 |
| DOIs | |
| State | Published - 04 2018 |
| Externally published | Yes |
Bibliographical note
Publisher Copyright:© 2012 IEEE.
Keywords
- Poly-Si channel
- positive bias temperature instability (PBTI)
- thin-film transistor (TFT)
- tunnel transistor