Implementation of second-order Ku-band chip filter on si substrate with commercial 0.18μm CMOS technology

Y. C. Chiang; H. C. Chiu; W. L. Hsieh

doi:10.1109/MWSYM.2006.249437

Implementation of second-order Ku-band chip filter on si substrate with commercial 0.18μm CMOS technology

Y. C. Chiang^*
, H. C. Chiu
, W. L. Hsieh

^*Corresponding author for this work

Department of Electronic Engineering

Chang Gung University

Research output: Contribution to journal › Conference article › peer-review

20 Scopus citations

Abstract

This study presents a Ku-band band-pass filter designed and fabricated with a commercial CMOS technology. The filter utilizes a π-network coupling structure to construct the desired coupling and the resonant tanks on Si substrate with a compact size and the low-loss performance. A method of synthesizing π-network filter is proposed. A 17GHz filter chip was fabricated by 1.18μm CMOS technology. The size of filter is 0.56mm×0.6mm and the measured pass-band insertion loss of filter is about 3.2dB.

Original language	English
Article number	4015149
Pages (from-to)	1249-1252
Number of pages	4
Journal	IEEE MTT-S International Microwave Symposium Digest
DOIs	https://doi.org/10.1109/MWSYM.2006.249437
State	Published - 2006
Event	2006 IEEE MTT-S International Microwave Symposium Digest - San Francisco, CA, United States Duration: 11 06 2006 → 16 06 2006

Keywords

CMOS
Integrated filters
Microwave filters

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10.1109/MWSYM.2006.249437

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title = "Implementation of second-order Ku-band chip filter on si substrate with commercial 0.18μm CMOS technology",

abstract = "This study presents a Ku-band band-pass filter designed and fabricated with a commercial CMOS technology. The filter utilizes a π-network coupling structure to construct the desired coupling and the resonant tanks on Si substrate with a compact size and the low-loss performance. A method of synthesizing π-network filter is proposed. A 17GHz filter chip was fabricated by 1.18μm CMOS technology. The size of filter is 0.56mm×0.6mm and the measured pass-band insertion loss of filter is about 3.2dB.",

keywords = "CMOS, Integrated filters, Microwave filters",

author = "Chiang, \{Y. C.\} and Chiu, \{H. C.\} and Hsieh, \{W. L.\}",

year = "2006",

doi = "10.1109/MWSYM.2006.249437",

language = "英语",

pages = "1249--1252",

journal = "IEEE MTT-S International Microwave Symposium Digest",

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AU - Chiang, Y. C.

AU - Chiu, H. C.

AU - Hsieh, W. L.

PY - 2006

Y1 - 2006

N2 - This study presents a Ku-band band-pass filter designed and fabricated with a commercial CMOS technology. The filter utilizes a π-network coupling structure to construct the desired coupling and the resonant tanks on Si substrate with a compact size and the low-loss performance. A method of synthesizing π-network filter is proposed. A 17GHz filter chip was fabricated by 1.18μm CMOS technology. The size of filter is 0.56mm×0.6mm and the measured pass-band insertion loss of filter is about 3.2dB.

AB - This study presents a Ku-band band-pass filter designed and fabricated with a commercial CMOS technology. The filter utilizes a π-network coupling structure to construct the desired coupling and the resonant tanks on Si substrate with a compact size and the low-loss performance. A method of synthesizing π-network filter is proposed. A 17GHz filter chip was fabricated by 1.18μm CMOS technology. The size of filter is 0.56mm×0.6mm and the measured pass-band insertion loss of filter is about 3.2dB.

KW - CMOS

KW - Integrated filters

KW - Microwave filters

UR - https://www.scopus.com/pages/publications/34250325957

U2 - 10.1109/MWSYM.2006.249437

DO - 10.1109/MWSYM.2006.249437

M3 - 会议文章

AN - SCOPUS:34250325957

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SP - 1249

EP - 1252

JO - IEEE MTT-S International Microwave Symposium Digest

JF - IEEE MTT-S International Microwave Symposium Digest

M1 - 4015149

T2 - 2006 IEEE MTT-S International Microwave Symposium Digest

Y2 - 11 June 2006 through 16 June 2006

ER -

Implementation of second-order Ku-band chip filter on si substrate with commercial 0.18μm CMOS technology

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Keywords

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