@inproceedings{40a5d86d6a2a4536bf1c3ee90b6e0901,
title = "Improved 150°C retention in Hf o.3O o.5N 0.2 memory device with low voltage and fast writing",
abstract = "At 150°C under a fast 100 μs and low ±9VP/E voltage, the [TaN-Ir 3Si]-HfAlO-LaAlO 3-Hf 0.3O 0.5N 0.2-HfAlO-SiO 2-Si memory device shows good device integrity of a 3.2V initial ΔV th and 2.4V 10-year extrapolated retention. This only 25% retention decay at 150°C was achieved by double quantum barriers confining trapped carriers in deep Hf 0.3O 0.5N 0.2 well.",
author = "Lin, {S. H.} and Yang, {H. J.} and Kao, {H. L.} and Yeh, {F. S.} and Albert Chin",
year = "2008",
doi = "10.1109/DRC.2008.4800734",
language = "英语",
isbn = "9781424419425",
series = "Device Research Conference - Conference Digest, DRC",
pages = "61--62",
booktitle = "66th DRC Device Research Conference Digest, DRC 2008",
note = "66th DRC Device Research Conference Digest, DRC 2008 ; Conference date: 23-06-2008 Through 25-06-2008",
}