Improved 150°C retention in Hf o.3O o.5N 0.2 memory device with low voltage and fast writing

S. H. Lin, H. J. Yang, H. L. Kao, F. S. Yeh, Albert Chin

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

At 150°C under a fast 100 μs and low ±9VP/E voltage, the [TaN-Ir 3Si]-HfAlO-LaAlO 3-Hf 0.3O 0.5N 0.2-HfAlO-SiO 2-Si memory device shows good device integrity of a 3.2V initial ΔV th and 2.4V 10-year extrapolated retention. This only 25% retention decay at 150°C was achieved by double quantum barriers confining trapped carriers in deep Hf 0.3O 0.5N 0.2 well.

Original languageEnglish
Title of host publication66th DRC Device Research Conference Digest, DRC 2008
Pages61-62
Number of pages2
DOIs
StatePublished - 2008
Event66th DRC Device Research Conference Digest, DRC 2008 - Santa Barbara, CA, United States
Duration: 23 06 200825 06 2008

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770

Conference

Conference66th DRC Device Research Conference Digest, DRC 2008
Country/TerritoryUnited States
CitySanta Barbara, CA
Period23/06/0825/06/08

Fingerprint

Dive into the research topics of 'Improved 150°C retention in Hf o.3O o.5N 0.2 memory device with low voltage and fast writing'. Together they form a unique fingerprint.

Cite this