Improved 150oC Retention in Hf0.3O0.5N0.2 Memory Device with Low Voltage and Fast Writing

Research output: Contribution to conference › Proceeding

Original language	American English
State	Published - 2008
Event	66th Device Research Conference - Santa Barbara, California,USA Duration: 23 06 2008 → 25 06 2008

Conference	66th Device Research Conference
Period	23/06/08 → 25/06/08

Cite this

@conference{7d0e5f0ec9e347878a66a38ed23cceb6,

title = "Improved 150oC Retention in Hf0.3O0.5N0.2 Memory Device with Low Voltage and Fast Writing",

author = "Lin, \{S. H.\} and Yang, \{H. J.\} and Hsuan-Ling Kao and Yeh, \{F. S.\} and Albert Chin",

year = "2008",

language = "American English",

note = "66th Device Research Conference ; Conference date: 23-06-2008 Through 25-06-2008",

}