Improved bipolar resistive switching memory using W/TaOx/W structure

Amit Prakash; Siddheswar Maikap; H. Y. Lee; G. Chen; F. Chen; Min Jing Tsai; M. J. Kao

doi:10.4028/www.scientific.net/AMR.159.333

Improved bipolar resistive switching memory using W/TaO_x/W structure

Amit Prakash^*, Siddheswar Maikap, H. Y. Lee, G. Chen, F. Chen, Min Jing Tsai, M. J. Kao

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

4 Scopus citations

Abstract

Resistive switching memory characteristics of high-κ TaO_x film in a W/TaO_x/W structure have been investigated and compared with Al/TaO_x/W structure. Amorphous TaO_x film with a thickness of 6.8 nm was confirmed by HRTEM image and EDX analysis. The switching in Al/TaO_x/W structure is found to be unstable with large variations in set and reset voltages. The memory device in W/TaO_x/W structure shows good memory characteristics with a low power of ∼500μAx1.6V. The current conduction mechanism is fitted to Ohmic and SCLC in LRS and HRS, respectively. The memory device has shown good endurance characteristics of >5×10³ cycles and good data retention with a stable HRS/LRS.

Original language	English
Title of host publication	Micro Nano Devices, Structure and Computing Systems
Pages	333-337
Number of pages	5
DOIs	https://doi.org/10.4028/www.scientific.net/AMR.159.333
State	Published - 2011
Event	2010 International Conference on Micro Nano Devices, Structure and Computing Systems, MNDSCS 2010 - Singapore, Singapore Duration: 06 11 2010 → 07 11 2010

Publication series

Name	Advanced Materials Research
Volume	159
ISSN (Print)	1022-6680

Conference

Conference	2010 International Conference on Micro Nano Devices, Structure and Computing Systems, MNDSCS 2010
Country/Territory	Singapore
City	Singapore
Period	06/11/10 → 07/11/10

Keywords

High-κ TaO
Resistive memory
Tungsten (W)

Access to Document

10.4028/www.scientific.net/AMR.159.333

Cite this

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title = "Improved bipolar resistive switching memory using W/TaOx/W structure",

abstract = "Resistive switching memory characteristics of high-κ TaOx film in a W/TaOx/W structure have been investigated and compared with Al/TaOx/W structure. Amorphous TaOx film with a thickness of 6.8 nm was confirmed by HRTEM image and EDX analysis. The switching in Al/TaOx/W structure is found to be unstable with large variations in set and reset voltages. The memory device in W/TaOx/W structure shows good memory characteristics with a low power of ∼500μAx1.6V. The current conduction mechanism is fitted to Ohmic and SCLC in LRS and HRS, respectively. The memory device has shown good endurance characteristics of >5×103 cycles and good data retention with a stable HRS/LRS.",

keywords = "High-κ TaO, Resistive memory, Tungsten (W)",

author = "Amit Prakash and Siddheswar Maikap and Lee, {H. Y.} and G. Chen and F. Chen and Tsai, {Min Jing} and Kao, {M. J.}",

year = "2011",

doi = "10.4028/www.scientific.net/AMR.159.333",

language = "英语",

isbn = "9783037850091",

series = "Advanced Materials Research",

pages = "333--337",

booktitle = "Micro Nano Devices, Structure and Computing Systems",

note = "2010 International Conference on Micro Nano Devices, Structure and Computing Systems, MNDSCS 2010 ; Conference date: 06-11-2010 Through 07-11-2010",

}

Prakash, A, Maikap, S, Lee, HY, Chen, G, Chen, F, Tsai, MJ & Kao, MJ 2011, Improved bipolar resistive switching memory using W/TaO_x/W structure. in Micro Nano Devices, Structure and Computing Systems. Advanced Materials Research, vol. 159, pp. 333-337, 2010 International Conference on Micro Nano Devices, Structure and Computing Systems, MNDSCS 2010, Singapore, Singapore, 06/11/10. https://doi.org/10.4028/www.scientific.net/AMR.159.333

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T1 - Improved bipolar resistive switching memory using W/TaOx/W structure

AU - Prakash, Amit

AU - Maikap, Siddheswar

AU - Lee, H. Y.

AU - Chen, G.

AU - Chen, F.

AU - Tsai, Min Jing

AU - Kao, M. J.

PY - 2011

Y1 - 2011

N2 - Resistive switching memory characteristics of high-κ TaOx film in a W/TaOx/W structure have been investigated and compared with Al/TaOx/W structure. Amorphous TaOx film with a thickness of 6.8 nm was confirmed by HRTEM image and EDX analysis. The switching in Al/TaOx/W structure is found to be unstable with large variations in set and reset voltages. The memory device in W/TaOx/W structure shows good memory characteristics with a low power of ∼500μAx1.6V. The current conduction mechanism is fitted to Ohmic and SCLC in LRS and HRS, respectively. The memory device has shown good endurance characteristics of >5×103 cycles and good data retention with a stable HRS/LRS.

AB - Resistive switching memory characteristics of high-κ TaOx film in a W/TaOx/W structure have been investigated and compared with Al/TaOx/W structure. Amorphous TaOx film with a thickness of 6.8 nm was confirmed by HRTEM image and EDX analysis. The switching in Al/TaOx/W structure is found to be unstable with large variations in set and reset voltages. The memory device in W/TaOx/W structure shows good memory characteristics with a low power of ∼500μAx1.6V. The current conduction mechanism is fitted to Ohmic and SCLC in LRS and HRS, respectively. The memory device has shown good endurance characteristics of >5×103 cycles and good data retention with a stable HRS/LRS.

KW - High-κ TaO

KW - Resistive memory

KW - Tungsten (W)

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