Improved carrier distributions by varying barrier thickness for InGaN/GaN LEDs

S. F. Yu*, Ray Ming Lin, S. J. Chang, J. R. Chen, J. Y. Chu, C. T. Kuo, Z. Y. Jiao

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

12 Scopus citations

Abstract

In this paper, we minimized efficiency droop by varying barrier thickness for InGaN/GaN multiple quantum wells (MWQs) featuring narrow quantum barriers (NQBs). The external quantum efficiency (EQE) for a light-emitting diode (LED) possessing NQBs improved by 18% at a current density of 200 Acm-2 , compared to that of a conventional LED incorporating a 12-nm-thick barrier. The enhanced carrier distribution resulting from the presence of NQBs was practically approved from another experimental design in this study. We suggest that the NQBs displayed uniform carrier distribution in active layer and decreased the carrier density in the active layer at a critical current density.

Original languageEnglish
Article number6243151
Pages (from-to)239-243
Number of pages5
JournalIEEE/OSA Journal of Display Technology
Volume9
Issue number4
DOIs
StatePublished - 2013

Keywords

  • Droop
  • InGaN
  • LEDs
  • narrow quantum barriers

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