Improved carrier distributions by varying barrier thickness for InGaN/GaN LEDs

S. F. Yu; Ray Ming Lin; S. J. Chang; J. R. Chen; J. Y. Chu; C. T. Kuo; Z. Y. Jiao

doi:10.1109/JDT.2012.2205367

Improved carrier distributions by varying barrier thickness for InGaN/GaN LEDs

S. F. Yu^*, Ray Ming Lin, S. J. Chang, J. R. Chen, J. Y. Chu, C. T. Kuo, Z. Y. Jiao

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Contribution to journal › Journal Article › peer-review

13 Scopus citations

Abstract

In this paper, we minimized efficiency droop by varying barrier thickness for InGaN/GaN multiple quantum wells (MWQs) featuring narrow quantum barriers (NQBs). The external quantum efficiency (EQE) for a light-emitting diode (LED) possessing NQBs improved by 18% at a current density of 200 Acm^-2 , compared to that of a conventional LED incorporating a 12-nm-thick barrier. The enhanced carrier distribution resulting from the presence of NQBs was practically approved from another experimental design in this study. We suggest that the NQBs displayed uniform carrier distribution in active layer and decreased the carrier density in the active layer at a critical current density.

Original language	English
Article number	6243151
Pages (from-to)	239-243
Number of pages	5
Journal	IEEE/OSA Journal of Display Technology
Volume	9
Issue number	4
DOIs	https://doi.org/10.1109/JDT.2012.2205367
State	Published - 2013

Keywords

Droop
InGaN
LEDs
narrow quantum barriers

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title = "Improved carrier distributions by varying barrier thickness for InGaN/GaN LEDs",

abstract = "In this paper, we minimized efficiency droop by varying barrier thickness for InGaN/GaN multiple quantum wells (MWQs) featuring narrow quantum barriers (NQBs). The external quantum efficiency (EQE) for a light-emitting diode (LED) possessing NQBs improved by 18% at a current density of 200 Acm-2 , compared to that of a conventional LED incorporating a 12-nm-thick barrier. The enhanced carrier distribution resulting from the presence of NQBs was practically approved from another experimental design in this study. We suggest that the NQBs displayed uniform carrier distribution in active layer and decreased the carrier density in the active layer at a critical current density.",

keywords = "Droop, InGaN, LEDs, narrow quantum barriers",

author = "Yu, {S. F.} and Lin, {Ray Ming} and Chang, {S. J.} and Chen, {J. R.} and Chu, {J. Y.} and Kuo, {C. T.} and Jiao, {Z. Y.}",

year = "2013",

doi = "10.1109/JDT.2012.2205367",

language = "英语",

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pages = "239--243",

journal = "IEEE/OSA Journal of Display Technology",

issn = "1551-319X",

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TY - JOUR

T1 - Improved carrier distributions by varying barrier thickness for InGaN/GaN LEDs

AU - Yu, S. F.

AU - Lin, Ray Ming

AU - Chang, S. J.

AU - Chen, J. R.

AU - Chu, J. Y.

AU - Kuo, C. T.

AU - Jiao, Z. Y.

PY - 2013

Y1 - 2013

N2 - In this paper, we minimized efficiency droop by varying barrier thickness for InGaN/GaN multiple quantum wells (MWQs) featuring narrow quantum barriers (NQBs). The external quantum efficiency (EQE) for a light-emitting diode (LED) possessing NQBs improved by 18% at a current density of 200 Acm-2 , compared to that of a conventional LED incorporating a 12-nm-thick barrier. The enhanced carrier distribution resulting from the presence of NQBs was practically approved from another experimental design in this study. We suggest that the NQBs displayed uniform carrier distribution in active layer and decreased the carrier density in the active layer at a critical current density.

AB - In this paper, we minimized efficiency droop by varying barrier thickness for InGaN/GaN multiple quantum wells (MWQs) featuring narrow quantum barriers (NQBs). The external quantum efficiency (EQE) for a light-emitting diode (LED) possessing NQBs improved by 18% at a current density of 200 Acm-2 , compared to that of a conventional LED incorporating a 12-nm-thick barrier. The enhanced carrier distribution resulting from the presence of NQBs was practically approved from another experimental design in this study. We suggest that the NQBs displayed uniform carrier distribution in active layer and decreased the carrier density in the active layer at a critical current density.

KW - Droop

KW - InGaN

KW - LEDs

KW - narrow quantum barriers

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DO - 10.1109/JDT.2012.2205367

M3 - 文章

AN - SCOPUS:84875601003

SN - 1551-319X

VL - 9

SP - 239

EP - 243

JO - IEEE/OSA Journal of Display Technology

JF - IEEE/OSA Journal of Display Technology

IS - 4

M1 - 6243151

ER -

Improved carrier distributions by varying barrier thickness for InGaN/GaN LEDs

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Keywords

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