Improved gate leakage and microwave performance by inserting a thin erbium oxide layer on AlGaN/GaN/Silicon HEMT structure

Fu Chuan Chu; Ying Jie Tsai; Sheng Yu Liao; Chou Shuang Huang; Ray Ming Lin; Sheng Fu Yu; Shuh Sen Ren

Improved gate leakage and microwave performance by inserting a thin erbium oxide layer on AlGaN/GaN/Silicon HEMT structure

Fu Chuan Chu, Ying Jie Tsai, Sheng Yu Liao, Chou Shuang Huang, Ray Ming Lin, Sheng Fu Yu, Shuh Sen Ren

Department of Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

We report on AlGaN/GaN/Silicon heterostucture Metal- Oxide-Semiconductor high electron mobility transistor (MOS-HEMT) using electron-beam (e-beam) deposited high dielectric constant (High-K) erbium oxide layer as the gate, the Er₂O₃ inserted layer dielectric constant developed in this study was 10.1. Moreover, exhibit improved device characteristics performance, as compared with the conventional high electron mobility transistor (HEMT).

Original language	English
Title of host publication	2012 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2012
State	Published - 2012
Event	27th International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2012 - Boston, MA, United States Duration: 23 04 2012 → 26 04 2012

Publication series

Name	2012 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2012

Conference

Conference	27th International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2012
Country/Territory	United States
City	Boston, MA
Period	23/04/12 → 26/04/12

Keywords

Erbium oxide
GaN
High-K
MOS-HEMT

Cite this

Chu, F. C., Tsai, Y. J., Liao, S. Y., Huang, C. S., Lin, R. M., Yu, S. F., & Ren, S. S. (2012). Improved gate leakage and microwave performance by inserting a thin erbium oxide layer on AlGaN/GaN/Silicon HEMT structure. In 2012 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2012 (2012 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2012).

Chu, Fu Chuan ; Tsai, Ying Jie ; Liao, Sheng Yu et al. / Improved gate leakage and microwave performance by inserting a thin erbium oxide layer on AlGaN/GaN/Silicon HEMT structure. 2012 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2012. 2012. (2012 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2012).

@inproceedings{29fb1f04e1bc43e5ae1f836798106562,

title = "Improved gate leakage and microwave performance by inserting a thin erbium oxide layer on AlGaN/GaN/Silicon HEMT structure",

abstract = "We report on AlGaN/GaN/Silicon heterostucture Metal- Oxide-Semiconductor high electron mobility transistor (MOS-HEMT) using electron-beam (e-beam) deposited high dielectric constant (High-K) erbium oxide layer as the gate, the Er2O3 inserted layer dielectric constant developed in this study was 10.1. Moreover, exhibit improved device characteristics performance, as compared with the conventional high electron mobility transistor (HEMT).",

keywords = "Erbium oxide, GaN, High-K, MOS-HEMT",

author = "Chu, {Fu Chuan} and Tsai, {Ying Jie} and Liao, {Sheng Yu} and Huang, {Chou Shuang} and Lin, {Ray Ming} and Yu, {Sheng Fu} and Ren, {Shuh Sen}",

year = "2012",

language = "英语",

isbn = "1893580199",

series = "2012 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2012",

booktitle = "2012 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2012",

note = "27th International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2012 ; Conference date: 23-04-2012 Through 26-04-2012",

}

Chu, FC, Tsai, YJ, Liao, SY, Huang, CS, Lin, RM, Yu, SF & Ren, SS 2012, Improved gate leakage and microwave performance by inserting a thin erbium oxide layer on AlGaN/GaN/Silicon HEMT structure. in 2012 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2012. 2012 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2012, 27th International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2012, Boston, MA, United States, 23/04/12.

Improved gate leakage and microwave performance by inserting a thin erbium oxide layer on AlGaN/GaN/Silicon HEMT structure. / Chu, Fu Chuan; Tsai, Ying Jie; Liao, Sheng Yu et al.
2012 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2012. 2012. (2012 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2012).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Improved gate leakage and microwave performance by inserting a thin erbium oxide layer on AlGaN/GaN/Silicon HEMT structure

AU - Chu, Fu Chuan

AU - Tsai, Ying Jie

AU - Liao, Sheng Yu

AU - Huang, Chou Shuang

AU - Lin, Ray Ming

AU - Yu, Sheng Fu

AU - Ren, Shuh Sen

PY - 2012

Y1 - 2012

N2 - We report on AlGaN/GaN/Silicon heterostucture Metal- Oxide-Semiconductor high electron mobility transistor (MOS-HEMT) using electron-beam (e-beam) deposited high dielectric constant (High-K) erbium oxide layer as the gate, the Er2O3 inserted layer dielectric constant developed in this study was 10.1. Moreover, exhibit improved device characteristics performance, as compared with the conventional high electron mobility transistor (HEMT).

AB - We report on AlGaN/GaN/Silicon heterostucture Metal- Oxide-Semiconductor high electron mobility transistor (MOS-HEMT) using electron-beam (e-beam) deposited high dielectric constant (High-K) erbium oxide layer as the gate, the Er2O3 inserted layer dielectric constant developed in this study was 10.1. Moreover, exhibit improved device characteristics performance, as compared with the conventional high electron mobility transistor (HEMT).

KW - Erbium oxide

KW - GaN

KW - High-K

KW - MOS-HEMT

UR - http://www.scopus.com/inward/record.url?scp=84887326915&partnerID=8YFLogxK

M3 - 会议稿件

AN - SCOPUS:84887326915

SN - 1893580199

SN - 9781893580190

T3 - 2012 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2012

BT - 2012 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2012

T2 - 27th International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2012

Y2 - 23 April 2012 through 26 April 2012

ER -

Chu FC, Tsai YJ, Liao SY, Huang CS, Lin RM, Yu SF et al. Improved gate leakage and microwave performance by inserting a thin erbium oxide layer on AlGaN/GaN/Silicon HEMT structure. In 2012 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2012. 2012. (2012 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2012).

Improved gate leakage and microwave performance by inserting a thin erbium oxide layer on AlGaN/GaN/Silicon HEMT structure

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