Improved Gate Leakage and Microwave Power Performance by Inserting A Thin Praseodymium Gate Metal Layer in AlGaAs/InGaAs Doped-Channel Field Effect Transistors

Ming Jyh Hwu; Hsien Chin Chiu; Shih Cheng Yang; Yi Jen Chan; Liann Be Chang

doi:10.1143/JJAP.43.111

Improved Gate Leakage and Microwave Power Performance by Inserting A Thin Praseodymium Gate Metal Layer in AlGaAs/InGaAs Doped-Channel Field Effect Transistors

Ming Jyh Hwu
, Hsien Chin Chiu
, Shih Cheng Yang
, Yi Jen Chan
, Liann Be Chang

National Central University
National Defense University Taiwan

Research output: Contribution to journal › Journal Article › peer-review

3 Scopus citations

Abstract

The Praseodymium (Pr) inserted gate AlGaAs/InGaAs heterostructure doped-channel field effect transistors (DCFETs) exhibit improved dc and rf power performance, as compared with the conventional ones, resulting from the gate leakage current reduction. The Schottky gate breakdown voltage enhances from 8V to 15V, and a power-added efficiency (PAE) improves from 38% to 43% at 1.8 GHz.

Original language	English
Pages (from-to)	111-112
Number of pages	2
Journal	Japanese Journal of Applied Physics
Volume	43
Issue number	1
DOIs	https://doi.org/10.1143/JJAP.43.111
State	Published - 01 2004
Externally published	Yes

Keywords

DCFET
GaAs
Microwave power
Praseodymium
Schottky gate

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10.1143/JJAP.43.111

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title = "Improved Gate Leakage and Microwave Power Performance by Inserting A Thin Praseodymium Gate Metal Layer in AlGaAs/InGaAs Doped-Channel Field Effect Transistors",

abstract = "The Praseodymium (Pr) inserted gate AlGaAs/InGaAs heterostructure doped-channel field effect transistors (DCFETs) exhibit improved dc and rf power performance, as compared with the conventional ones, resulting from the gate leakage current reduction. The Schottky gate breakdown voltage enhances from 8V to 15V, and a power-added efficiency (PAE) improves from 38\% to 43\% at 1.8 GHz.",

keywords = "DCFET, GaAs, Microwave power, Praseodymium, Schottky gate",

author = "Hwu, \{Ming Jyh\} and Chiu, \{Hsien Chin\} and Yang, \{Shih Cheng\} and Chan, \{Yi Jen\} and Chang, \{Liann Be\}",

year = "2004",

month = jan,

doi = "10.1143/JJAP.43.111",

language = "英语",

volume = "43",

pages = "111--112",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Institute of Physics",

number = "1",

}

Improved Gate Leakage and Microwave Power Performance by Inserting A Thin Praseodymium Gate Metal Layer in AlGaAs/InGaAs Doped-Channel Field Effect Transistors. / Hwu, Ming Jyh; Chiu, Hsien Chin; Yang, Shih Cheng et al.
In: Japanese Journal of Applied Physics, Vol. 43, No. 1, 01.2004, p. 111-112.

Research output: Contribution to journal › Journal Article › peer-review

TY - JOUR

T1 - Improved Gate Leakage and Microwave Power Performance by Inserting A Thin Praseodymium Gate Metal Layer in AlGaAs/InGaAs Doped-Channel Field Effect Transistors

AU - Hwu, Ming Jyh

AU - Chiu, Hsien Chin

AU - Yang, Shih Cheng

AU - Chan, Yi Jen

AU - Chang, Liann Be

PY - 2004/1

Y1 - 2004/1

N2 - The Praseodymium (Pr) inserted gate AlGaAs/InGaAs heterostructure doped-channel field effect transistors (DCFETs) exhibit improved dc and rf power performance, as compared with the conventional ones, resulting from the gate leakage current reduction. The Schottky gate breakdown voltage enhances from 8V to 15V, and a power-added efficiency (PAE) improves from 38% to 43% at 1.8 GHz.

AB - The Praseodymium (Pr) inserted gate AlGaAs/InGaAs heterostructure doped-channel field effect transistors (DCFETs) exhibit improved dc and rf power performance, as compared with the conventional ones, resulting from the gate leakage current reduction. The Schottky gate breakdown voltage enhances from 8V to 15V, and a power-added efficiency (PAE) improves from 38% to 43% at 1.8 GHz.

KW - DCFET

KW - GaAs

KW - Microwave power

KW - Praseodymium

KW - Schottky gate

UR - https://www.scopus.com/pages/publications/1842811005

U2 - 10.1143/JJAP.43.111

DO - 10.1143/JJAP.43.111

M3 - 文章

AN - SCOPUS:1842811005

SN - 0021-4922

VL - 43

SP - 111

EP - 112

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 1

ER -

Improved Gate Leakage and Microwave Power Performance by Inserting A Thin Praseodymium Gate Metal Layer in AlGaAs/InGaAs Doped-Channel Field Effect Transistors

Abstract

Keywords

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