Improved Gate Leakage and Microwave Power Performance by Inserting A Thin Praseodymium Gate Metal Layer in AlGaAs/InGaAs Doped-Channel Field Effect Transistors

Ming Jyh Hwu, Hsien Chin Chiu, Shih Cheng Yang, Yi Jen Chan, Liann Be Chang

Research output: Contribution to journalJournal Article peer-review

3 Scopus citations

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