Improved gate leakage current and power performance by inserting a thin praseodymium layer in AlGaAs/InGaAs HEMTs

M.J. HWU, Hsien-Chin Chiu, S.C. YANG, Y.J. CHAN, Liann-Be Chang

Research output: Contribution to conference › Proceeding

Original language	American English
State	Published - 2007
Event	2007 International Electron Devices and Materials Symposia (IEDMS 2007) - Hsinchu, Taiwan Duration: 30 11 2007 → 01 12 2007

Conference	2007 International Electron Devices and Materials Symposia (IEDMS 2007)
Period	30/11/07 → 01/12/07

Cite this

@conference{b9f3aa6d5f754e69bc48c59bdd0f6ca2,

title = "Improved gate leakage current and power performance by inserting a thin praseodymium layer in AlGaAs/InGaAs HEMTs",

author = "M.J. HWU and Hsien-Chin Chiu and S.C. YANG and Y.J. CHAN and Liann-Be Chang",

year = "2007",

language = "American English",

note = "2007 International Electron Devices and Materials Symposia (IEDMS 2007) ; Conference date: 30-11-2007 Through 01-12-2007",

}

TY - CONF

T1 - Improved gate leakage current and power performance by inserting a thin praseodymium layer in AlGaAs/InGaAs HEMTs

AU - HWU, M.J.

AU - Chiu, Hsien-Chin

AU - YANG, S.C.

AU - CHAN, Y.J.

AU - Chang, Liann-Be

PY - 2007

Y1 - 2007

M3 - Proceeding

T2 - 2007 International Electron Devices and Materials Symposia (IEDMS 2007)

Y2 - 30 November 2007 through 1 December 2007

ER -