Improved gate reliability normally-off p-GaN/AlN/AlGaN/GaN HEMT with AlGaN cap-layer

Chia Hao Liu, Hsien Chin Chiu*, Hsiang Chun Wang, Hsuan Ling Kao, Chong Rong Huang

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

21 Scopus citations


In this work, the dual junction-high-electronmobility- transistor (DJ-HEMT) was investigated. The thin AlGaN was grown between the p-GaN gate and gate metal. In the TCAD simulations, the band gap and electric field were shown in this letter, proving the dual junction forming. Moreover, DJ-HEMT shows the high gate voltage swing due to the dual junction at the gate region of device, which enhancegate performance.By contrastwith standard p-GaN HEMT (ST-HEMT), DJ-HEMT shows higher VTH of 2V, saturation current of 187mA/mm, ION/IOFF ratio of 5.1 × 108 and gate swing voltagewhich is higher than 20V. In addition, DJ-HEMT also shows the lower device leakage current and superior life timemeasurement due to the thicker and higher barrier of AlGaN cap layer.

Original languageEnglish
Pages (from-to)1432-1435
Number of pages4
JournalIEEE Electron Device Letters
Issue number10
StatePublished - 10 2021

Bibliographical note

Publisher Copyright:
© 2021 IEEE.


  • Etching stop
  • Gate reliability
  • Life time
  • Normally-off
  • TCAD simulation
  • p-GaN gate HEMT


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