Abstract
In this work, the dual junction-high-electronmobility- transistor (DJ-HEMT) was investigated. The thin AlGaN was grown between the p-GaN gate and gate metal. In the TCAD simulations, the band gap and electric field were shown in this letter, proving the dual junction forming. Moreover, DJ-HEMT shows the high gate voltage swing due to the dual junction at the gate region of device, which enhancegate performance.By contrastwith standard p-GaN HEMT (ST-HEMT), DJ-HEMT shows higher VTH of 2V, saturation current of 187mA/mm, ION/IOFF ratio of 5.1 × 108 and gate swing voltagewhich is higher than 20V. In addition, DJ-HEMT also shows the lower device leakage current and superior life timemeasurement due to the thicker and higher barrier of AlGaN cap layer.
Original language | English |
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Pages (from-to) | 1432-1435 |
Number of pages | 4 |
Journal | IEEE Electron Device Letters |
Volume | 42 |
Issue number | 10 |
DOIs | |
State | Published - 10 2021 |
Bibliographical note
Publisher Copyright:© 2021 IEEE.
Keywords
- Etching stop
- Gate reliability
- Life time
- Normally-off
- TCAD simulation
- p-GaN gate HEMT