Improved Gate Reliability Normally-Off p-GaN/AlN/AlGaN/GaN HEMT with AlGaN Cap-Layer

Chia Hao Liu; Hsien Chin Chiu; Hsiang Chun Wang; Hsuan Ling Kao; Chong Rong Haung

Improved Gate Reliability Normally-Off p-GaN/AlN/AlGaN/GaN HEMT with AlGaN Cap-Layer

Chia Hao Liu, Hsien Chin Chiu^*, Hsiang Chun Wang, Hsuan Ling Kao, Chong Rong Haung

^*Corresponding author for this work

Department of Electronic Engineering

Chang Gung University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this work, the dual junction-high-electron-mobility-transistor (DJ-HEMT) was investigated. The thin AlGaN was grown between the p-GaN gate and gate metal. In the TCAD simulations, the band gap and electric field were shown in this letter, proving the dual junction forming. Moreover, DJ-HEMT shows the high gate voltage swing due to the dual junction at the gate region of device, which enhance gate performance. By contrast with standard p-GaN HEMT (ST-HEMT), DJ-HEMT shows higher VTH of 2V, saturation current of 187mA/mm, ION/IOFF ratio of 5.1 x 10⁸ and gate swing voltage which is higher than 20V. In addition, DJ-HEMT also shows the lower device leakage current and superior life time measurement due to the thicker and higher barrier of AlGaN cap layer.

Original language	English
Title of host publication	CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers
Publisher	CS Mantech
Pages	89-92
Number of pages	4
ISBN (Electronic)	9781893580312
State	Published - 2021
Event	35th Annual International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2021 - Orlando, Virtual, United States Duration: 24 05 2021 → 27 05 2021

Publication series

Name	CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers

Conference

Conference	35th Annual International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2021
Country/Territory	United States
City	Orlando, Virtual
Period	24/05/21 → 27/05/21

Bibliographical note

Publisher Copyright:
© 2021 CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers. All Rights Reserved.

Keywords

Etching stop
Gate reliability
Life time
Normally-off
P-GaN gate HEMT
TCAD simulation

Cite this

Liu, C. H., Chiu, H. C., Wang, H. C., Kao, H. L., & Haung, C. R. (2021). Improved Gate Reliability Normally-Off p-GaN/AlN/AlGaN/GaN HEMT with AlGaN Cap-Layer. In CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers (pp. 89-92). (CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers). CS Mantech.

Liu, Chia Hao ; Chiu, Hsien Chin ; Wang, Hsiang Chun et al. / Improved Gate Reliability Normally-Off p-GaN/AlN/AlGaN/GaN HEMT with AlGaN Cap-Layer. CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers. CS Mantech, 2021. pp. 89-92 (CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers).

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title = "Improved Gate Reliability Normally-Off p-GaN/AlN/AlGaN/GaN HEMT with AlGaN Cap-Layer",

abstract = "In this work, the dual junction-high-electron-mobility-transistor (DJ-HEMT) was investigated. The thin AlGaN was grown between the p-GaN gate and gate metal. In the TCAD simulations, the band gap and electric field were shown in this letter, proving the dual junction forming. Moreover, DJ-HEMT shows the high gate voltage swing due to the dual junction at the gate region of device, which enhance gate performance. By contrast with standard p-GaN HEMT (ST-HEMT), DJ-HEMT shows higher VTH of 2V, saturation current of 187mA/mm, ION/IOFF ratio of 5.1 x 108 and gate swing voltage which is higher than 20V. In addition, DJ-HEMT also shows the lower device leakage current and superior life time measurement due to the thicker and higher barrier of AlGaN cap layer.",

keywords = "Etching stop, Gate reliability, Life time, Normally-off, P-GaN gate HEMT, TCAD simulation",

author = "Liu, {Chia Hao} and Chiu, {Hsien Chin} and Wang, {Hsiang Chun} and Kao, {Hsuan Ling} and Haung, {Chong Rong}",

note = "Publisher Copyright: {\textcopyright} 2021 CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers. All Rights Reserved.; 35th Annual International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2021 ; Conference date: 24-05-2021 Through 27-05-2021",

year = "2021",

language = "英语",

series = "CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers",

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pages = "89--92",

booktitle = "CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers",

}

Liu, CH, Chiu, HC, Wang, HC, Kao, HL & Haung, CR 2021, Improved Gate Reliability Normally-Off p-GaN/AlN/AlGaN/GaN HEMT with AlGaN Cap-Layer. in CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers. CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers, CS Mantech, pp. 89-92, 35th Annual International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2021, Orlando, Virtual, United States, 24/05/21.

Improved Gate Reliability Normally-Off p-GaN/AlN/AlGaN/GaN HEMT with AlGaN Cap-Layer. / Liu, Chia Hao; Chiu, Hsien Chin; Wang, Hsiang Chun et al.
CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers. CS Mantech, 2021. p. 89-92 (CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Improved Gate Reliability Normally-Off p-GaN/AlN/AlGaN/GaN HEMT with AlGaN Cap-Layer

AU - Liu, Chia Hao

AU - Chiu, Hsien Chin

AU - Wang, Hsiang Chun

AU - Kao, Hsuan Ling

AU - Haung, Chong Rong

PY - 2021

Y1 - 2021

N2 - In this work, the dual junction-high-electron-mobility-transistor (DJ-HEMT) was investigated. The thin AlGaN was grown between the p-GaN gate and gate metal. In the TCAD simulations, the band gap and electric field were shown in this letter, proving the dual junction forming. Moreover, DJ-HEMT shows the high gate voltage swing due to the dual junction at the gate region of device, which enhance gate performance. By contrast with standard p-GaN HEMT (ST-HEMT), DJ-HEMT shows higher VTH of 2V, saturation current of 187mA/mm, ION/IOFF ratio of 5.1 x 108 and gate swing voltage which is higher than 20V. In addition, DJ-HEMT also shows the lower device leakage current and superior life time measurement due to the thicker and higher barrier of AlGaN cap layer.

AB - In this work, the dual junction-high-electron-mobility-transistor (DJ-HEMT) was investigated. The thin AlGaN was grown between the p-GaN gate and gate metal. In the TCAD simulations, the band gap and electric field were shown in this letter, proving the dual junction forming. Moreover, DJ-HEMT shows the high gate voltage swing due to the dual junction at the gate region of device, which enhance gate performance. By contrast with standard p-GaN HEMT (ST-HEMT), DJ-HEMT shows higher VTH of 2V, saturation current of 187mA/mm, ION/IOFF ratio of 5.1 x 108 and gate swing voltage which is higher than 20V. In addition, DJ-HEMT also shows the lower device leakage current and superior life time measurement due to the thicker and higher barrier of AlGaN cap layer.

KW - Etching stop

KW - Gate reliability

KW - Life time

KW - Normally-off

KW - P-GaN gate HEMT

KW - TCAD simulation

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M3 - 会议稿件

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T3 - CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers

SP - 89

EP - 92

BT - CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers

PB - CS Mantech

T2 - 35th Annual International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2021

Y2 - 24 May 2021 through 27 May 2021

ER -

Liu CH, Chiu HC, Wang HC, Kao HL, Haung CR. Improved Gate Reliability Normally-Off p-GaN/AlN/AlGaN/GaN HEMT with AlGaN Cap-Layer. In CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers. CS Mantech. 2021. p. 89-92. (CS MANTECH 2021 - 2021 International Conference on Compound Semiconductor Manufacturing Technology, Digest of Papers).

Improved Gate Reliability Normally-Off p-GaN/AlN/AlGaN/GaN HEMT with AlGaN Cap-Layer

Abstract

Publication series

Conference

Bibliographical note

Keywords

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