Improved Ion/Ioff Current Ratio and Dynamic Resistance of a p-GaN High-Electron-Mobility Transistor Using an Al0.5GaN Etch-Stop Layer

Hsiang Chun Wang; Chia Hao Liu; Chong Rong Huang; Min Hung Shih; Hsien Chin Chiu; Hsuan Ling Kao; Xinke Liu

doi:10.3390/ma15103503

Improved I_on/I_off Current Ratio and Dynamic Resistance of a p-GaN High-Electron-Mobility Transistor Using an Al_0.5GaN Etch-Stop Layer

Hsiang Chun Wang, Chia Hao Liu, Chong Rong Huang, Min Hung Shih, Hsien Chin Chiu^*, Hsuan Ling Kao, Xinke Liu

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Contribution to journal › Journal Article › peer-review

1 Scopus citations

Abstract

In this study, we investigated enhance mode (E-mode) p-GaN/AlGaN/GaN high-electron-mobility transistors (HEMTs) with an Al_0.5GaN etch-stop layer. Compared with an AlN etch-stop layer, the Al_0.5GaN etch-stop layer not only reduced lattice defects but engendered improved DC performance in the device; this can be attributed to the lattice match between the layer and substrate. The results revealed that the Al_0.5GaN etch-stop layer could reduce dislocation by 37.5% and improve device characteristics. Compared with the device with the AlN etch-stop layer, the p-GaN HEMT with the Al_0.5GaN etch-stop layer achieved a higher drain current on/off ratio (2.47 × 10⁷), a lower gate leakage current (1.55 × 10⁻⁵ A/mm), and a lower on-state resistance (21.65 Ω·mm); moreover, its dynamic R_ON value was reduced to 1.69 (from 2.26).

Original language	English
Article number	3503
Journal	Materials
Volume	15
Issue number	10
DOIs	https://doi.org/10.3390/ma15103503
State	Published - 01 05 2022

Bibliographical note

Publisher Copyright:
© 2022 by the authors. Licensee MDPI, Basel, Switzerland.

Keywords

etch-stop layer
high selectivity ratio
normally off
p-GaN gate HEMT

Access to Document

10.3390/ma15103503

Cite this

@article{6f0dc93646bd4414b360f97cd342544b,

title = "Improved Ion/Ioff Current Ratio and Dynamic Resistance of a p-GaN High-Electron-Mobility Transistor Using an Al0.5GaN Etch-Stop Layer",

abstract = "In this study, we investigated enhance mode (E-mode) p-GaN/AlGaN/GaN high-electron-mobility transistors (HEMTs) with an Al0.5GaN etch-stop layer. Compared with an AlN etch-stop layer, the Al0.5GaN etch-stop layer not only reduced lattice defects but engendered improved DC performance in the device; this can be attributed to the lattice match between the layer and substrate. The results revealed that the Al0.5GaN etch-stop layer could reduce dislocation by 37.5\% and improve device characteristics. Compared with the device with the AlN etch-stop layer, the p-GaN HEMT with the Al0.5GaN etch-stop layer achieved a higher drain current on/off ratio (2.47 × 107), a lower gate leakage current (1.55 × 10−5 A/mm), and a lower on-state resistance (21.65 Ω·mm); moreover, its dynamic RON value was reduced to 1.69 (from 2.26).",

keywords = "etch-stop layer, high selectivity ratio, normally off, p-GaN gate HEMT",

author = "Wang, \{Hsiang Chun\} and Liu, \{Chia Hao\} and Huang, \{Chong Rong\} and Shih, \{Min Hung\} and Chiu, \{Hsien Chin\} and Kao, \{Hsuan Ling\} and Xinke Liu",

note = "Publisher Copyright: {\textcopyright} 2022 by the authors. Licensee MDPI, Basel, Switzerland.",

year = "2022",

month = may,

day = "1",

doi = "10.3390/ma15103503",

language = "英语",

volume = "15",

journal = "Materials",

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T1 - Improved Ion/Ioff Current Ratio and Dynamic Resistance of a p-GaN High-Electron-Mobility Transistor Using an Al0.5GaN Etch-Stop Layer

AU - Wang, Hsiang Chun

AU - Liu, Chia Hao

AU - Huang, Chong Rong

AU - Shih, Min Hung

AU - Chiu, Hsien Chin

AU - Kao, Hsuan Ling

AU - Liu, Xinke

PY - 2022/5/1

Y1 - 2022/5/1

N2 - In this study, we investigated enhance mode (E-mode) p-GaN/AlGaN/GaN high-electron-mobility transistors (HEMTs) with an Al0.5GaN etch-stop layer. Compared with an AlN etch-stop layer, the Al0.5GaN etch-stop layer not only reduced lattice defects but engendered improved DC performance in the device; this can be attributed to the lattice match between the layer and substrate. The results revealed that the Al0.5GaN etch-stop layer could reduce dislocation by 37.5% and improve device characteristics. Compared with the device with the AlN etch-stop layer, the p-GaN HEMT with the Al0.5GaN etch-stop layer achieved a higher drain current on/off ratio (2.47 × 107), a lower gate leakage current (1.55 × 10−5 A/mm), and a lower on-state resistance (21.65 Ω·mm); moreover, its dynamic RON value was reduced to 1.69 (from 2.26).

AB - In this study, we investigated enhance mode (E-mode) p-GaN/AlGaN/GaN high-electron-mobility transistors (HEMTs) with an Al0.5GaN etch-stop layer. Compared with an AlN etch-stop layer, the Al0.5GaN etch-stop layer not only reduced lattice defects but engendered improved DC performance in the device; this can be attributed to the lattice match between the layer and substrate. The results revealed that the Al0.5GaN etch-stop layer could reduce dislocation by 37.5% and improve device characteristics. Compared with the device with the AlN etch-stop layer, the p-GaN HEMT with the Al0.5GaN etch-stop layer achieved a higher drain current on/off ratio (2.47 × 107), a lower gate leakage current (1.55 × 10−5 A/mm), and a lower on-state resistance (21.65 Ω·mm); moreover, its dynamic RON value was reduced to 1.69 (from 2.26).

KW - etch-stop layer

KW - high selectivity ratio

KW - normally off

KW - p-GaN gate HEMT

UR - https://www.scopus.com/pages/publications/85130703435

U2 - 10.3390/ma15103503

DO - 10.3390/ma15103503

M3 - 文章

AN - SCOPUS:85130703435

SN - 1996-1944

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JO - Materials

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