Improved light extraction efficiency on GaN LEDs by an In2O 3 nano-cone film

Jan Tian Lian; Jian Huei Ye; Jian Ye Liou; Kai Chieh Tsao; Nai Chuan Chen; Tai Yuan Lin

doi:10.1039/c3tc31003e

Improved light extraction efficiency on GaN LEDs by an In₂O ₃ nano-cone film

Jan Tian Lian, Jian Huei Ye, Jian Ye Liou, Kai Chieh Tsao, Nai Chuan Chen, Tai Yuan Lin^*

^*Corresponding author for this work

Graduate Institute of Electro-Optical Engineering

National Taiwan Ocean University

Research output: Contribution to journal › Journal Article › peer-review

15 Scopus citations

Abstract

A bottom up method for the fabrication of a roughened transparent conductive layer (TCL) to accomplish a prominent enhancement in light extraction from GaN-based blue light emitting diodes (LEDs) has been developed. The nanostructured transparent conductive oxide (TCO) film was obtained by thermal oxidation of InN nanocones (NCs) grown beforehand into In₂O ₃ NCs in a tube furnace at 550 °C, beyond the dissociation temperature of InN. A two-fold increase in the light output power of the LED with the In₂O₃ NCs TCL was achieved compared to that of an LED using a conventional Ni/Au TCL. Our work proposes a simple, useful and low thermal budget route to form a roughened In₂O₃ NCs film used as the TCL to realize a prominent enhancement in light extraction from LEDs. Based on the capability of the low temperature fabrication process of roughened In₂O₃ TCLs, our proposed method is suitable for industrial mass manufacture.

Original language	English
Pages (from-to)	6559-6564
Number of pages	6
Journal	Journal of Materials Chemistry C
Volume	1
Issue number	40
DOIs	https://doi.org/10.1039/c3tc31003e
State	Published - 28 10 2013

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title = "Improved light extraction efficiency on GaN LEDs by an In2O 3 nano-cone film",

abstract = "A bottom up method for the fabrication of a roughened transparent conductive layer (TCL) to accomplish a prominent enhancement in light extraction from GaN-based blue light emitting diodes (LEDs) has been developed. The nanostructured transparent conductive oxide (TCO) film was obtained by thermal oxidation of InN nanocones (NCs) grown beforehand into In2O 3 NCs in a tube furnace at 550 °C, beyond the dissociation temperature of InN. A two-fold increase in the light output power of the LED with the In2O3 NCs TCL was achieved compared to that of an LED using a conventional Ni/Au TCL. Our work proposes a simple, useful and low thermal budget route to form a roughened In2O3 NCs film used as the TCL to realize a prominent enhancement in light extraction from LEDs. Based on the capability of the low temperature fabrication process of roughened In2O3 TCLs, our proposed method is suitable for industrial mass manufacture.",

author = "Lian, \{Jan Tian\} and Ye, \{Jian Huei\} and Liou, \{Jian Ye\} and Tsao, \{Kai Chieh\} and Chen, \{Nai Chuan\} and Lin, \{Tai Yuan\}",

year = "2013",

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doi = "10.1039/c3tc31003e",

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T1 - Improved light extraction efficiency on GaN LEDs by an In2O 3 nano-cone film

AU - Lian, Jan Tian

AU - Ye, Jian Huei

AU - Liou, Jian Ye

AU - Tsao, Kai Chieh

AU - Chen, Nai Chuan

AU - Lin, Tai Yuan

PY - 2013/10/28

Y1 - 2013/10/28

N2 - A bottom up method for the fabrication of a roughened transparent conductive layer (TCL) to accomplish a prominent enhancement in light extraction from GaN-based blue light emitting diodes (LEDs) has been developed. The nanostructured transparent conductive oxide (TCO) film was obtained by thermal oxidation of InN nanocones (NCs) grown beforehand into In2O 3 NCs in a tube furnace at 550 °C, beyond the dissociation temperature of InN. A two-fold increase in the light output power of the LED with the In2O3 NCs TCL was achieved compared to that of an LED using a conventional Ni/Au TCL. Our work proposes a simple, useful and low thermal budget route to form a roughened In2O3 NCs film used as the TCL to realize a prominent enhancement in light extraction from LEDs. Based on the capability of the low temperature fabrication process of roughened In2O3 TCLs, our proposed method is suitable for industrial mass manufacture.

AB - A bottom up method for the fabrication of a roughened transparent conductive layer (TCL) to accomplish a prominent enhancement in light extraction from GaN-based blue light emitting diodes (LEDs) has been developed. The nanostructured transparent conductive oxide (TCO) film was obtained by thermal oxidation of InN nanocones (NCs) grown beforehand into In2O 3 NCs in a tube furnace at 550 °C, beyond the dissociation temperature of InN. A two-fold increase in the light output power of the LED with the In2O3 NCs TCL was achieved compared to that of an LED using a conventional Ni/Au TCL. Our work proposes a simple, useful and low thermal budget route to form a roughened In2O3 NCs film used as the TCL to realize a prominent enhancement in light extraction from LEDs. Based on the capability of the low temperature fabrication process of roughened In2O3 TCLs, our proposed method is suitable for industrial mass manufacture.

UR - https://www.scopus.com/pages/publications/84884867440

U2 - 10.1039/c3tc31003e

DO - 10.1039/c3tc31003e

M3 - 文章

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SN - 2050-7534

VL - 1

SP - 6559

EP - 6564

JO - Journal of Materials Chemistry C

JF - Journal of Materials Chemistry C

IS - 40

ER -

Improved light extraction efficiency on GaN LEDs by an In₂O ₃ nano-cone film

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