Abstract
We have characterized and modeled the radio frequency (RF) power performance of a 0.18 mm asymmetric-lightly-doped-drain metal-oxide- semiconductor field-effect transistor (LDD MOSFET). In comparison with the conventional 0.18 mm MOSFET, this asymmetric-LDD device shows a larger power density of 0.54W/mm, and 8 dB better adjacent channel power ratio (ACPR) linearity at 2.4 GHz from the improved twice DC breakdown voltage of 6.9 V. These significant improvements of RF power performance in the asymmetric-LDD transistor are important for the medium RF power amplifier application.
Original language | English |
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Journal | Japanese Journal of Applied Physics |
Volume | 49 |
Issue number | 3 PART 1 |
DOIs | |
State | Published - 2010 |