Improved resistance memory characteristics and switching mechanism using TiN electrode on TaOx/W structure

A. Prakash, S. Maikap*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations

Abstract

Improvement in the resistive switching characteristics using TiN bottom electrode on TaOx/W structure as compared to W electrode is reported. The thickness of TaOx layer is confirmed by high-resolution TEM image. The memory device with TiN electrode has shown formation-free repeatable bipolar resistive switching with resistance ratio of >30. Besides, improved resistive switching performance in terms of lower operation current (50 vs. 300 μ), longer read endurance (>105 cycles), 85 °C data retention of > 104 seconds and device yield of >90% is also achieved for TiN electrode. The TiN/TaOx interface is playing a key role in controlling the oxygen vacancy defects which in turn control the formation/dissolution of conducting filament.

Original languageEnglish
Title of host publicationProceedings of the 2013 IEEE 5th International Nanoelectronics Conference, INEC 2013
Pages136-138
Number of pages3
DOIs
StatePublished - 2013
Event2013 IEEE 5th International Nanoelectronics Conference, INEC 2013 - Singapore, Singapore
Duration: 02 01 201304 01 2013

Publication series

NameProceedings - Winter Simulation Conference
ISSN (Print)0891-7736

Conference

Conference2013 IEEE 5th International Nanoelectronics Conference, INEC 2013
Country/TerritorySingapore
CitySingapore
Period02/01/1304/01/13

Keywords

  • RRAM
  • bipolar switching
  • filament
  • high-k tantalum oxide
  • interfacial layer
  • oxygen ion migration

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