Improved resistance switching characteristics in Ti-Doped Yb 2O 3 for resistive nonvolatile memory devices

Somnath Mondal; Jim Long Her; Fa Hsyang Chen; Shao Ju Shih; Tung Ming Pan

doi:10.1109/LED.2012.2196672

Improved resistance switching characteristics in Ti-Doped Yb ₂O ₃ for resistive nonvolatile memory devices

Somnath Mondal^*, Jim Long Her, Fa Hsyang Chen, Shao Ju Shih, Tung Ming Pan

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

25 Scopus citations

Abstract

A conventional approach of doping to control the bistable resistance switching in Yb ₂O ₃ was investigated for nonvolatile memory applications. With the help of Ti doping into oxide films during the process, better cycle-to-cycle resistance distribution and switching voltage uniformity were found due to modulation of current conduction mechanism from space-charge-limited current in Yb ₂O ₃ to Schottky type in YbTiO _x. The program/erase cycles with successive readout operation over 10 ⁵ cycles can be achieved without any degradation. No data loss was found upon continuous readout process at both room temperature and 85 ° C The Ni/YbTiO _xTaN memory is a promising candidate to be integrated into future memory processes.

Original language	English
Article number	6203359
Pages (from-to)	1069-1071
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	33
Issue number	7
DOIs	https://doi.org/10.1109/LED.2012.2196672
State	Published - 2012

Keywords

Doping
Ni
TaN
Yb O
YbTiO
resistive random access memory (ReRAM)

Access to Document

10.1109/LED.2012.2196672

Cite this

@article{9009c4bb4035461fb287a478b3a9d9f0,

title = "Improved resistance switching characteristics in Ti-Doped Yb 2O 3 for resistive nonvolatile memory devices",

abstract = "A conventional approach of doping to control the bistable resistance switching in Yb 2O 3 was investigated for nonvolatile memory applications. With the help of Ti doping into oxide films during the process, better cycle-to-cycle resistance distribution and switching voltage uniformity were found due to modulation of current conduction mechanism from space-charge-limited current in Yb 2O 3 to Schottky type in YbTiO x. The program/erase cycles with successive readout operation over 10 5 cycles can be achieved without any degradation. No data loss was found upon continuous readout process at both room temperature and 85 ° C The Ni/YbTiO xTaN memory is a promising candidate to be integrated into future memory processes.",

keywords = "Doping, Ni, TaN, Yb O, YbTiO, resistive random access memory (ReRAM)",

author = "Somnath Mondal and Her, {Jim Long} and Chen, {Fa Hsyang} and Shih, {Shao Ju} and Pan, {Tung Ming}",

year = "2012",

doi = "10.1109/LED.2012.2196672",

language = "英语",

volume = "33",

pages = "1069--1071",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "7",

}

TY - JOUR

T1 - Improved resistance switching characteristics in Ti-Doped Yb 2O 3 for resistive nonvolatile memory devices

AU - Mondal, Somnath

AU - Her, Jim Long

AU - Chen, Fa Hsyang

AU - Shih, Shao Ju

AU - Pan, Tung Ming

PY - 2012

Y1 - 2012

N2 - A conventional approach of doping to control the bistable resistance switching in Yb 2O 3 was investigated for nonvolatile memory applications. With the help of Ti doping into oxide films during the process, better cycle-to-cycle resistance distribution and switching voltage uniformity were found due to modulation of current conduction mechanism from space-charge-limited current in Yb 2O 3 to Schottky type in YbTiO x. The program/erase cycles with successive readout operation over 10 5 cycles can be achieved without any degradation. No data loss was found upon continuous readout process at both room temperature and 85 ° C The Ni/YbTiO xTaN memory is a promising candidate to be integrated into future memory processes.

AB - A conventional approach of doping to control the bistable resistance switching in Yb 2O 3 was investigated for nonvolatile memory applications. With the help of Ti doping into oxide films during the process, better cycle-to-cycle resistance distribution and switching voltage uniformity were found due to modulation of current conduction mechanism from space-charge-limited current in Yb 2O 3 to Schottky type in YbTiO x. The program/erase cycles with successive readout operation over 10 5 cycles can be achieved without any degradation. No data loss was found upon continuous readout process at both room temperature and 85 ° C The Ni/YbTiO xTaN memory is a promising candidate to be integrated into future memory processes.

KW - Doping

KW - Ni

KW - TaN

KW - Yb O

KW - YbTiO

KW - resistive random access memory (ReRAM)

UR - http://www.scopus.com/inward/record.url?scp=84862841603&partnerID=8YFLogxK

U2 - 10.1109/LED.2012.2196672

DO - 10.1109/LED.2012.2196672

M3 - 文章

AN - SCOPUS:84862841603

SN - 0741-3106

VL - 33

SP - 1069

EP - 1071

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 7

M1 - 6203359

ER -

Improved resistance switching characteristics in Ti-Doped Yb ₂O ₃ for resistive nonvolatile memory devices

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this